High Speed, High Voltage Switching Circuit

Test Chip

Overview:

- Circuit is capable of switching high voltages to zero within nanoseconds depending on the number of MOSFETS

- By stacking five MOSFETs^[1] in NMOS configuration, the circuit can switch up to 2.5 kV

- Capacitors are placed in series^[2] for a simpler layout

- The same circuit can be modified into a PMOS configuration

- Furthermore, the PMOS configuration can be modified into a C5 process that is capable of switching up to 30 V

NMOS Tests:

PMOS Tests: 

Data Sheets:

References:

^[1]Baker, R. Jacob and Johnson, B. P., 1992, "Stacking power MOSFETs for use in high speed instrumentation" 

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