Lab 8_Mosis Chip 1 - ECE 421L 

Authored by Jared Hayes 

hayesj18@unlv.nevada.edu 

November 30, 2015

 

Members:

  

Description:

Design layouts, schematics, symbols, and simulations of the following in preparation for implementation on a chip:
 
  
1) a 25k resistor using the n-well
(connect between 2 pads but we also need a common gnd pad) 

  2) a voltage divider between a 25k resistor and a 10k resistor
  3) An inverter made with a 6/0.6 NMOS and a 12/0.6 PMOS
  4) a PMOS transistor measuring 6u/0.6u where all 4 terminals of each device are connected to bond pads (7 pads + common gnd pad) 

  5) an NMOS transistor measuring 6u/0.6u where all 4 terminals of each device are connected to bond pads (7 pads + common gnd pad)
  6) a NAND gate using 6/0.6 NMOSs and PMOSs
  7) a NOR gate using 6/0.6 NMOSs and PMOSs
  8) 31 stage ring oscillator with a buffer for driving a 20pF off-chip load

  9) 8-bit resettable (with clear) up/down counter (with buffered outputs)
  

Pre-lab

Make sure you understand all of the Cadence tutorials on CMOSedu here.

   


Lab Report:

 

Padframe

 

   

 



  

 
Testing Instructions:

For all the parts bellow pin<20>  should always be connected to ground and pin<40>  should always be connected to vdd.
 


The project materials are backed up to my dropbox folder.


 

The cadence files can be found here: Mosis Chip 1






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