The
equation for the bandgap
energy of Si given by Eq.
(23.21) is a little bit different than the

equation
given here
and other places. In particular you use an α
= 702e-6 and β =
1108

while
I’ve seen others use α =
473e-6 and β =
636. Is the equation in the book wrong?

I
too have seen, in the last 10 years or so, the change to α =
473e-6 and β =
636. I don’t believe

the
equation in the book is wrong (link
showing both) but perhaps the change results in a little

more
accuracy?

I
wrote a little MATLAB script to compare the two equations. It can be
downloaded
here.

Below
is a comparison between the two equations for temperature changes from
200K to

400K
with Eg(To)
= 1.16.

For
one other reference, on page 16,
Fig. 6, of the third edition of Sze
and Ng, “Physics
of

Semiconductor
Devices,” Wiley, 2007 the
bandgap energy of Si is
plotted for, Eg(To) =
1.169,

α =
490e-6, and β =
655.