The equation for the bandgap energy of Si given by Eq. (23.21) is a little bit different than the

equation given here and other places. In particular you use an α = 702e-6 and β = 1108

while I’ve seen others use α = 473e-6 and β = 636. Is the equation in the book wrong?

 

I too have seen, in the last 10 years or so, the change to α = 473e-6 and β = 636. I don’t believe

the equation in the book is wrong (link showing both) but perhaps the change results in a little

more accuracy?

 

I wrote a little MATLAB script to compare the two equations. It can be downloaded here.

Below is a comparison between the two equations for temperature changes from 200K to

400K with Eg(To) = 1.16.

 

http://cmosedu.com/cmos1/email/fig1.jpg   http://cmosedu.com/cmos1/email/fig2.jpg

 

For one other reference, on page 16, Fig. 6, of the third edition of Sze and Ng, “Physics of

Semiconductor Devices,” Wiley, 2007 the bandgap energy of Si is plotted for, Eg(To) = 1.169,

α = 490e-6, and β = 655.

 

Return