Power Up / Power Down Circuit


Using an MOS voltage referenceChip Picture Here

Using a bandgap voltage referenceChip Picture Here

Courtesy Tower Semiconductor


The cells pictured above are temperature insensitive Power Up/Power Down circuits.

Design Specifications:

  • The inputs to the cell are only VDD and VSS
  • The output is less than 0.7V if 0.7V < VDD < 4.1V +/- 0.25V and is more than VDD-0.2V if VDD > 4.1V +/- 0.25V
  • A small hysteresis (100-200mV) is included in the cell

The cells were designed using a 0.6 micron, double metal, single poly process. 


Last Updated Tue: May 19, 1997


Jake Baker