Lab 3 - ECE 421L 

Authored by Byron Gorsuch,

gorsuch@unlv.nevada.edu,

September 19, 2017 

  

Lab Description

This lab will continue the development of the 10-bit DAC from lab 2. In this lab, the layout of the DAC will be created by using n-well resistors and metal 1 for connections.

 

Prelab

Tutorial 1 was completed in order to layout a 10K Ohm n-well resistor which will be used to create a layout for the DAC schematic created in lab 2.

                                                                                            Figure 1: 10k n-well resistor layout

    

In order to determine the length and width of the n-well to create a 10k resistor, the considerations of the C5 process from MOSIS were used.

Using this information the minimum width for the resistor is 3.6 microns. At 800 Ohms a square, in order to achieve a resistance of 10k Ohms it can be calculted that 12.5 squares are needed.
By choosing the width to be 4.5 microns as in tutorial 1, it can then be calculated that the length must be about 4.5 * 12.5 microns or about 56 microns, however in order for the resistor to fit the
edges on the grid a length of 56.1 microns was used.

                                                                                        Figure 2: 10k n-well extracted view
   

   
Lab
The n-well resistor created in the prelab was used in order to layout a 10-bit DAC using the R-2R structure. By using the ruler tool, accessed by pressing 'K' in Virtouso, the exact dimensions of the n-well
resistor could be calculated as well as the minimum distance between n-wells (18λ = 5.4 microns).

                     
Figure 3: DAC Layout                                  Figure 4: DAC Layout Close-up                                                                           Figure 5: Extracted View of DAC Layout
   
Once the layout was complete, the validity of the layout could be checked using the Design Rule Checking(DRC) tool. If the DRC is successful, the command interpreter window will display the tests run and report zero errors found.
   
    With a DRC the extracted view of the layout can be created. A close-up of the ectracted view of the layout can be seen in Figure 5 above.
    The extracted view will display the value of each n-well resistor as well as any pins connected to the node being observed.

    To ensure that the DAC layout is in fact the correct layout of the schematic from lab 2, the extracted view can be compared to the schematic
    for verification using the Layout-Versus-Schematic (LVS) tool.

    With matching netlists, the extracted view can faithfully be used in order to simulate the layout. This can be done by opening the Spectre
    simulation tool and selecting Setup -> Environment. From this window, simply enter the word "extracted" before the word "schematic" as shown
    in figure 8 below. Once this is done the simulation can be performed as usual.





                              Figure 6: DRC Success                                     
   
       
                               Figure 7: LVS Success                                                                          Figure 8: How to Sim Extracted View
   
       
                              Figure 9: Test Schematic                                                                                                        Figure 10: Simulation Results
   
The schematic used to test the DAC created with the layout is the same as in lab 2. As can be seen in figure 10 above, the behavior of the DAC is as expected based on the simulations from lab 2.
The files used for this lab can be found here

           

Return to my lab directory

   

Return to CMOSedu.com