Lab 6 - ECE 421L
Authored
by Staford Snow, snows4@unlv.nevada.edu
10/26/2016
Lab
description: In this lab, I drafted schematics, created
symbols, designed layouts, and simulated a 2-input NAND and
XOR gate using 6u/0.6u MOSFETs. Following the completion of the
gates, I drafted a schematic, created a symbol, designed a layout, and
simulated a full adder circuit using my gates.
Pre Lab: Following the lab instruction, I backed up all my work from the lab and the course. I next went through the instruction in Tutorial 4.
Lab:
To begin the lab, I drafted the schematics for the 2-input NAND and XOR gates using 6u/0.6u MOSFETS.
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After creating the schematics, I designed the symbols for both gates.
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Continuing with the lab, I created the layout for the NAND and XOR gates.
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I made sure both layouts passed LVS and DRC.
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I next drafted a schematic to simulate my gates. I included an inverter to increase my knowledge.
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I
ran the simulation and was able to see that the timing of the input
pulses caused glitches. These glitches are cause, in part, by
propagation delay through the gates.
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After completing the NAND and XOR gate, I drafted the schematic for a full adder using the new gates.
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After completing the schematic, I created a symbol for this cell.
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Once I had the symbol completed, I used it in a schematic to run simulations.
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I ran the simulation and was able to see the schematic working.
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I next designed a layout for the full adder using the gates I made earlier.
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The layout passed DRC and LVS.
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I have included my zipped library here.
This concluded the requirements of lab 6.
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