Lab 6 - EE 421L 

Authored by Sharyn Miyaji,

Email: miyajis@unlv.nevada.edu

Wednesday, October 26, 2016

  

Pre-Lab Work   

   

For the Pre-Lab, we needed to go through Tutorial 4 in preparation for this lab.  In the tutorial, a NAND gate is created using NMOS and PMOS and then tested out.   

   


 

Lab Work

     

Creating a 2-input NAND gate

   

First, a schematic of the 2-input NAND gate, shown below, is created using NMOS and PMOS that both have a width of 6um and a length of 600nm.  Pin A and Pin B are representation of the two inputs in the NAND gate and the Pin AnandB are the representation of the output of the NAND gate.  Once the schematic has no error when it's checked and saved, a symbol is created as shown below.

   
Schematic

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/nand_SEM_f16_schematic.JPG

    

Symbol

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/nand_SEM_f16_symbol.JPG
   
Next, a layout of the NAND, shown below, is created by instantiating two nmos and two pmos.  The two PMOS are overlapped and flattened, where one of the metal1 source and metal1 drain are completely on top of each other.  The same is applied to the NMOS.  After the NMOS is overlapped and flattened, the metal1 and cc's in the middle are deleted since they are in series.  Once everything is connected and labeled, DRC the layout, extract it, and LVS it.
   
LayoutExtracted
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/nand_SEM_f16_layout.JPGhttp://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/nand_SEM_f16_extracted.JPG
     
DRC
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/nand_SEM_f16_DRC.JPG  
   
LVS
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/nand_SEM_f16_LVS.JPG
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/nand_SEM_f16_LVS_matched.JPG
     

Creating a 2-input XOR gate

   

First, create the schematic of an XOR gate, as shown below, using again NMOS and PMOS that are both 6um wide and 600nm long.   Pin A and Pin B are representation of the two inputs in the XOR gate and the Pin AxorB are the representation of the output of the XOR gate.  Once the schematic has no error when it's checked and saved, a symbol is created as shown below.

   

Schematic

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/xor_SEM_f16_schematic.JPG

   

Symbol

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/xor_SEM_f16_symbol.JPG

    

Next, a layout of the XOR, shown below, is created by instantiating six nmos and six pmos, where there are two sets of each of the PMOS and NMOS are overlapped and flattened.   Again, the metal1 and cc's of the NMOS in the middle are deleted.  Once everything is connected and labeled, DRC the layout, extract it, and LVS it.

   

LayoutExtracted
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/xor_SEM_f16_layout.JPGhttp://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/xor_SEM_f16_extracted.JPG

    

DRC

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/xor_SEM_f16_DRC.JPG

   

LVS

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/xor_SEM_f16_LVS.JPG

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/xor_SEM_f16_LVS_matched.JPG

     

Gate Simulation

   

Before any simulation is done, an inverter, shown below, must be created with an NMOS and a PMOS, where they both have a width of 6um and length of 600nm.  Once the schematic, symbol, and layout of the inverter passes, we are ready to do the gate simulation.

    

Inverter Schematic

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/inverter_SEM_f16_schematic.JPG

    

Inverter Symbol

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/inverter_SEM_f16_symbol.JPG

   

LayoutExtracted
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/inverter_SEM_f16_layout.JPGhttp://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/inverter_SEM_f16_extracted.JPG
   
DRC
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/inverter_SEM_f16_DRC.JPG

   

LVS

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/inverter_SEM_f16_LVS.JPG

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/inverter_SEM_f16_LVS_matched.JPG

   
Using the inverter, NAND, and XOR that was created previously, we create a schematic like the one below.  There are two pulse voltage sources and one dc voltage source, where the pulse voltage source simulate the logical operation of the gates for all possible inputs, which are 00, 01, 10, and 11.  In the simulation of the output variable AxorB, there is a glitch at 200 ns.  That glitch is caused by the inputs since input A is rising at that time while input B is falling.  The timing may not be exactly the same; therefore, it falls and rises for a very short period of time.

    

Schematic

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/sim_gates_SEM_f16_schematic.JPG

   

Simulation

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/sim_gates_SEM_f16_simulation.JPG
     
Truth Table
ABAiAnandBAxorB
00110
01111
10011
11000

     

Creating and Testing the Full Adder

   

First, a schematic of the full adder, shown below, is created by instantiating the symbols of the NAND and XOR gates that were created earlier.  After checking and saving the schematic, create a symbol as a representation of a full adder to be used for simulation.

    

Schematic

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/full_adder_SEM_f16_schematic.JPG

    

Symbol

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/full_adder_SEM_f16_symbol.JPG

     
Next, a layout must be created by instantiating the layouts of the NAND and XOR and connect them accordingly.  Once everything is connected, DRC, extracted, and LVS the full adder.
   
Layout
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/full_adder_SEM_f16_layout.JPG
   
Extracted
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/full_adder_SEM_f16_extracted.JPG         
     
DRC
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/full_adder_SEM_f16_DRC.JPG
   
LVS
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/full_adder_SEM_f16_LVS.JPG
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/full_adder_SEM_f16_LVS_matched.JPG
   
Once the symbol is created, test it by adding voltage sources and using the extracted version of the full adder.  The following should be the simulation results.

   

Schematic

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/sim_full_adder_SEM_f16_schematic.JPG

   

Simulation
http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/sim_full_adder_SEM_f16_simulation.JPG
     

Simulation Netlist

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/sim_full_adder_simulation_extracted.JPG

   

Truth Table

abcinscout
00000
00110
01010
01101
10010
10101
11001
11111

     

Again, there are glitches due to the voltage dropping and rising around the same time.  If you look closely, the fall time of one input voltage is at different time from the rise time of another input voltage; therefore, causing the simulation to drop and rise within a very short period of time.

   

Here is lab 6 files: lab6.zip

   


   

Back-Ups

   

Backing up my lab content in both my student drive and Google drive.

   

http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/Back_Up_1.JPG    http://cmosedu.com/jbaker/courses/ee421L/f16/students/miyajis/Lab%206/Back_Up_2.JPG

   

   

 

 

   

   

   
   
   
   
   
 
 
   
   
   
        

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