Lab 3 - ECE 421L
Authored
by Stephanie Silic,
silics@unlv.nevada.edu
September 21st, 2015
Description of lab:
For this lab, we are creating a layout of the 10-bit Digital-to-Analog Converter (DAC) designed in lab 2, using 10k resistors.
Prelab:
- Back up all work
All work backed up in Google Drive:
- Finish Tutorial #1
We left of the tutorial after creating the voltage divider below:
Now, our task is to use the n-well layer to lay out n-well resistors to implement the divider.
The 10k resistor is shown below (details on its construction in the lab report):
After
creating a new layout cell view, and instantiating two 10k resistors
and connecting the pins with Metal 1, we have the voltage divider as
follows:
Finally, we DRC the layout, extract it, perform LVS, and simulate the extraced view:
The output is what we expect from the voltage divider with an input of 1V.
This completes Tutorial 1.
Lab Report:
For Lab 3, we have to construct the layout of the DAC designed Lab 2 (my lab 2 report here).To
begin the layout, a new library must be created, then the DAC schematic
created in Lab 2 copied into it. Once that is complete, we can create a
new layout cell view and begin the layout of the DAC using a resistor
ladder network. The full library for lab 3 is shown below:
Layout of a 10k resistor:
To
create a resistor of a certain value using the n-well, we must set the
length and width of the n-well according to the process information
from MOSIS. The sheet resistance of the n-well is 800 ohms per square.
Thus, the total resistance of our n-well resistor will be 800 (L/W).
But the minimum width according to MOSIS C5 process is 3.6um. However,
we also need to keep in mind the grid is .15 um:
We
must have the n-well line up on the .15um grid. So as in Tutorial 1, we
can set the width to 4.5 um (divisible by .15), and adjust the length
to be 56.1 (adjusted from 56 so it's divisible by .15).
After extracting the n-well resistor, we can check its value by zooming in on the left side of the extracted view:
The value is 10.21k, which is close enough to 10k for us.
Using this n-well resistor in the layout of the DAC:
To
begin with, three resistors are instantiated to create the basic R-2R
cell, which we can copy in an array of 9. Each resistor in the DAC is
laid out in parallel having the same x-position but varying
y-positions. The bottom cell must be connected to the bottom resistor,
then to ground. All input and output pins are on metal 1 (seen here for B0 and gnd!):
The entire DAC looks like this:
Now, we have to DRC, extract the layout, and perform the LVS.
The LVS was successful:
Finally,
we can simulate the extracted view of the layout by going to our
sim_10-bit DAC cell and selecting Setup -> Environment and adding
the word "extracted" before "schematic in the window:
The simulation is as follows:
This simulation looks like it was successful, since it matches what was simulated with the schematic in Lab 2.
But
just to be sure we are simulating the extracted view, we check by
selecting Simulation -> Netlist -> Display and checking to see
that it shows the simulation is really from the extracted view:
As we can see, the simulation was indeed from the extracted layout, and thus our layout of the DAC is operating as it should.
To smooth out the output of the DAC, we add a 10pf capacitor to the output, as seen below:
The simulation, again from the extraced view, is as follows:
Once again, the simulation with our extraced layout agrees with the original simulations performed in lab 2.
Final design directory zipped here.
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