Lab 6 - EE 420L 

Authored by Steven Leung

Leungs@unlv.nevada.edu

10/14/2015


Pre-lab work



Introduction:
       
     The purpose of this lab is to be able to layout a full adder. A full adder composes of nand and xor gates. The layout of a full adder will be done in parts meaning that I will first layout a nand gate and then an xor gate. Therefore, the full adder can be layed out by calling these instances of nand and xor gates.
 
Below is the truth table for a full adder.
 
 

a

b

cin

s

cout

0

0

0

0

0

0

0

1

1

0

0

1

0

1

0

0

1

1

0

1

1

0

0

1

0

1

0

1

0

1

1

1

0

0

1

1

1

1

1

1

 
 Below are a series of pictures that show the layout of an nand gate and  a xor gate along with the DRC and LVS of each.
Note that all mosfets used in the layout of this lab is  6u/.6u
 
 
NANDXOR

Schematic

Schematic

Layout

Layout

DRC

DRC

Extracted

Extracted

LVS

LVS

   

  

Below are pictures showing the layout of an inverter.  

 

 


Schematic

Layout


Extracted


DRC

LVS

Simulations of gates

 

 Below are the schematic and simulation results for the gates that were layed out above. (each possible input combination is tested)

Note that the symbols in the schematic are generated form the schematic of the corresponding gates shown above.

 

 


Schematic

Simulation results

 

 

 Layout of Full Adder

 

 Below are the pictures showing the layout of a Full Adder. 

 

]


Schematic

Layout

Extracted

DRC

LVS

 

 

 Simulation of Full Adder


Schematic

Simulation Waveform
 
 
 From the waveform shown above, we can see some glitches on the output of cout and S. This is caused by the rise/fall times of the inputs not being ideal. During transition times for example when a is falling and b is falling at the same time, the sum should ideally stay at 1 but during transition times, there may be a time that the voltage levels are considered to be low for a brief moment therefore causing the output to have a false zero. This is a reason why that the matching of transistors is extremely important becuase if it takes longer for some MOSFETs to rise/.fall, the length of that false 0 will be significantly increased.

 

 

 Design files found here

  

 

 

 

 

 

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