Digital IC Design - Lab 4 - EE421L

Author: Leonardo Ledesma,

Email: ledesl1@unlv.nevada.edu

September 26, 2023

     

Lab Description

This lab will focus on the IV characteristics, layout, and simulation of PMOS and NMOS devices in the ON Semiconductor Cadence C5 Process.

  

Pre-Laboratory Procedure

- Before starting this lab, all previous work was backed up using .zip files and my personal Google Drive.

- The lab was read in its entirety to be prepared for instruction after covering all material found in Tutorial 2

 

Laboratory Objectives

1.) Generate the 4 schematics and simulations below

- 6u/600n NMOS simulating ID v. VDS varying VGS from 0-5V in 1V steps while VDS varies from 0-2V in 1mV steps

- 6u/600n NMOS simulating ID v. VGS for VDS = 100mV where VGS varies from 0-2V in 1mV steps

- 12u/600n PMOS simulating ID v. VSD for VSG varying 0-5V in 1V steps with VSD varying 0-5V in 1mV steps

- 12u/600n PMOS simulating ID v. VSG for VSD = 100mV varying VSG 0-2V in 1mV steps

 

2.) Lay out a 6u/600n NMOS connecting all 4 terminals to probe pads adjacent to the MOSFET device

- Show DRC confirmation and corresponding schematic with proof of LVS

 

3.)  Lay out a 12u/600n PMOS connecting all 4 terminals to probe pads adjacent to the MOSFET device

- Show DRC confirmation and corresponding schematic with proof of LVS

 
Laboratory Procedure

This lab begins with creating the testing schematics with probe pads for each NMOS and PMOS device along with a symbol for each. Below you can see the results of each 

PMOS and NMOS device circuit and thier respective symbol created using Cadence Design software.

      

Figure 1: NMOS schematic with pads

       

Figure 2: NMOS Symbol

      

Figure 3: PMOS schematic with pads

     

Figure 4: PMOS Symbol

 
Simulations
A series of simulations will now be performed to obtain the appropriate IV cruves for each device.

NMOS Device - ID v. VDS


Figure 5a (left): NMOS Simulation circuit
Figure 5b (right) Results simulating ID v. VDS

   
NMOS Device - ID v. VGS


Figure 6a (left): NMOS Simulation circuit
Figure 6b (right) Results simulating ID v. VGS

       
PMOS Device - ID v. VSD

Figure 7a (left): PMOS Simulation circuit
Figure 7b (right) Results simulating ID v. VSD

PMOS Device - ID v. VSG


Figure 8a (left): PMOS Simulation circuit
Figure 8b (right) Results simulating ID v. VSG

     
   
NMOS 6.0um / 600nm Layout

Figure 9a: NMOS layout showing probe pads and DRC confirmation

Figure 9b: Zoomed in NMOS to show connections
     

Figure 10: NMOS LVS confirmation

     
     
PMOS 12.0um / 600nm Layout


Figure 11a: PMOS layout showing probe pads and DRC confirmation
Figure 11b: Zoomed in PMOS to show connections      
       

Figure 11c: PMOS LVS confirmation

       
Backups
As with all prevous labs, work was periodically backed up using .zip files and my personal Google Drive


Return to EE421 Labs