Lab 5 - EE 421L
Authored
by Jimmy Ruangnol,
(ruangnol@unlv.nevada.edu)
September 21, 2021
Pre-lab work
- Back-up all of your work from the lab and the course.
- Go through Tutorial 3 seen here.
Lab
description
The purpose of this lab is to design CMOS inverters by using NMOS AND
PMOS MOSFET's. For this lab, we must crated two inverters. The first
inverter is a 12um wdith PMOS and a 6um width NMOS. The second inverter
is a 48um wdith PMOS and a 24um width NMOS. All the lengths for the MOSFET's will be 600nm.
The
inverters are simulated for the ouput voltages driving the capacitive
loads. We ill be simulating for each inverter driving a 100fF,
1pF, 10pF, and 100pF loads. This will be done in Ultrasim and spectre
simulator.
Here is the schematic and layout of the 12um/6um inverter.
Make sure to check for DRC and LVS of the inverters (see below).
Here is the schematic and layout of the 12um/6um inverter. Notice that M is equal to 4 times bigger than the original inverter.
Make sure to check for DRC and LVS of the inverters (see below).
Make a symbol of both inverters.
When
creating a simulation make sure to set a global VDD through the
settings below. You can reach this by going to ADE Steup > Stimuli.
After setting the global soruces, you should get the result below.
Simulations:
The
inverters are simulated while driving capacitive loads of 100fF, 1pF,
10pF, and 100pF. This will be done in Ultrasim and spectre simulator
with the test schematic above. We will be using a variable capacitor and parametric analysis.
ADE 12um/6um Inverter:
Ultrasim 12um/6um Inverter:
ADE 48um/24um Inverter:
Ultrasim 48um/24um Inverter:
From
the simulation results, we can see that 48um/24um inverter takes a
shorter amount of time to reach 5V, compared to the 12um/6um inverter.
The MOSFETs are wider and have a lower resistance do to the wider
channel.
Always back up your work.
Click the Lab5.zip file for more info.
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