Lab 5 – Design, Layout, and SIM of CMOS Inverter

EE 421L - Fall 2019
Authored by
Lizz Heider
heider@unlv.nevada.edu

 

Submission Date: 9/24/2019

 

QUICK SUMMARY ON INVERTERS

·        An inverter… INVERTS meaning:

š PMOS connected to NMOS with Input A and Output Ai

š High Input – Low Output & Low Input – High Output

š Current is only flowing when the voltage is changing.

Here’s a summary

 

In tutorial 3 we draft the schematic, symbol, and layout of a CMOS Inverter.

Then we also simulate the DC behavior of the inverter.

 

Part 1 + 2: Create a schematic and layout out of a CMOS inverter

 

Part 3 – Extract Layout (no photo) and LVS check

Part 4 – A symbol was created for this Inverter, then used for simulation

 

No output because there is no Vdd source  - add Vdd source and setup in ADE Setup -Stimuli

Results in the following output:

 

 

 

 

 

 

 

 

 

 

 

 

 


(above) DC Characteristics of Inverter. Low input, High Output.

 

LAB BREAKDOWN

(A)         Draft schematics, layouts, and symbols for two inverters having sizes of

1.     12u/6u (width of PMOS / width of NMOS with both devices having minimum lengths of 0.6u)

2.    48u/24u where the devices use a multiplier, M=4 (set along with the width and length of the MOSFET)

(B)         Using SPICE simulate the operation of both of your inverters showing each driving a 100 fF, 1pF, 10 pF, and 100 pF capacitive load

 

12u/6u INVERTER                                                        48u/24u INVERTER M = 4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 


                 

 

1pF

 
                                                                 

 

 

              

 

 

100pF

 
 


                                          

 

(C)          SPICE Simulations

 

 

 

 


                                                                                                                                             

 

 

 

 

 

 

 

 

 

 

(ULTRASIM SIMULUATIONS)

 

 

 

 

 


                                                                                                                                             

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 


Ultrasim and Spice output the same results.
Observe that with larger MOSFETs (L/W) we see faster fall times and higher gains.

 

 

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