Lab 4 - EE 421L 

Authored by Adrian Angelo G Fuerte,

Rebelmail: fuerta1@unlv.nevada.edu

09/25/2019

 
 
Pre-Lab
 
The pre-lab consisted of reading through Lab 4 itself and going through Tutorial 2 which instructs us to make both the layouts and schematics of PMOS and NMOS. We then simulated both circuits and got their IV curves. For this pre-lab I began by creating a new library and copied Tutorial 1 to that new folder (make sure to chek the box that says update instances under options). Below are images from Tutorial 2.
 
New Library Created

 
Images from Tutorial 2

 



 
 

Lab description

 

For Laboratory 4, we are tasked to generate a total of 4 schematics and simulations which includes a layout for both the NMOS and PMOS devices. We will also be creating a probe pad layout which will be connected to the four terminals (Source, Drain, Gate, and Body) of our NMOS and PMOS devices.

 

NMOS (ID v VDS)

For this part of our lab, we are going to be creating a schematic of an NMOS device for simulating ID v. VDS for VGS varying from 0V to 5V in 1V steps while VDS varies from 0V to 5V in 1 mV steps using a 6u/600n width-to-length ratio. I also created a symbol for the NMOS as seen in the images below. To start off, I navigated to the component browser (bindkey I) --> select NCSU_Analog_Parts library --> N_Transistors -->nmos4.

NMOS Schematic

 

NMOS Symbol

 

NMOS Simulation Schematic

 

After creating the simulation schematic for NMOS, I started setting up the simulation by first selecting the NMOS model file (ami06N.m) from the ncsu-cdk-1.6.0.beta libary. The following simulation will be a DC analyses that sweeps VDS from 0 to 5V with 1mV increment. I also used parametric analysis to sweep VGS along with VDS and the output that will be plotted is seen in the image below which represents the current through the drain (Id)

 

Editing Design Variable 

 

ID v VDS setup

 

Parametric Analysis (Tool --> Parametric Analysis)

-After setting up the parametric analysis as seen below, press the green button and it will start the simulation and show the plot below.

  

Plot

 

NMOS (ID v VGS)

The next schematic is the same schematic as the first NMOS except we are simulating ID v VGS. For this schematic, VDS is going to be at a fixed voltage value of 100mV and VGS will be swept using dc analysis only (not parametric analysis) from 0V to 2 V with 1 mV increment. We are going to be using the same model file (ami06N.m). The simulation result shows that the VGS does not start increasing until the threshold voltage of 0.7V is reached (shown in the plot below).

 

DC analysis with VDS at 100mV


 
Simulation Schematic with VDS at 100mV


Plot

 

 

PMOS (ID v VSD)

 

For this next step, I created a schematic for my PMOS (the same steps as creating an NMOS transistor). For this step, VSG is going to vary from 0V to 5V in 1 V steps while VSD varies from 0V to 5V in 1mV steps. I will be using a 12u/600n width-to-length ratio for the PMOS device. The model file that will be used in this simuation is ami06P.m which is located in the same folder that ami06N.m, it is important to select ami06P.m or else the simulation will not work.

 

PMOS Schematic

 

PMOS Model

 

PMOS Symbol

 

PMOS Simulation Schematic

Plot Result

 

 

PMOS (ID v VSG)
The second schematic for the PMOS is the same schematic as the last one but VSD will be at a fixed voltage of 100mV and swept from 0V to 2V with 1mV increment. The same model file will be used and only DC analysis will be required to use not parametric analysis. The resulting plot will look the same as the plot from NMOS ID vs VGS but the threshold for the PMOS is a little higher at about 0.9V compared to the NMOS's 0.7V threshold.

Simulation Schematic

Plot

 

 

The next step after the simulations for NMOS and PMOS is to create a layout for both devices and connect all four terminals to probepads. For the first layout, an NMOS device will be used with a size of 6u/0.6u width-to-length ratio. Before starting to make the layout I first copied the cells to make the probe pad to be instantiated later onto my NMOS and PMOS devices from Lab4.

Probe Pad Schematic


Probe Pad Symbol

 
Probe Pad Layout

 
NMOS Layout
After copying the files onto my Lab folder, I started by instantiating my NMOS layout and sizing it to 6u/0.6u. This layout can be found in the NCSU_Techlib_ami_06 library when instantiating with the bindkey I.
 
NMOS Layout (without connections to probes. NOTE: gnd! is B)

 
NMOS schematic with pads



NMOS Layout with probe connections to S, G, D, B



DRC and LVS verification


 
 
PMOS Layout
 
The last step in this lab is to create a layout for the PMOS that will have a size of 12u/0.6u. This PMOS transistor is also found in the NCSU_Techlib_ami06 library.

PMOS Layout (without probes)

 
PMOS Schematic

 
PMOS Layout with probes

 

DRC and LVS verification for PMOS

 

 

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