Lab 3 - EE 421L
Authored
by Brian Medrano Kiaer
E-mail: kiaer@unlv.nevada.edu
September 17th 2018
Prelab work:
- Finish Tutorial 1
First is to create a a new cell within the Tutorial 1 Library called "R_div" this will be in the schematic view.
After
creating the voltage divider, it is imperative to "check and save" the
file on the top left of the Schematic Editor. Above we can see in the
log that the schematic check has completed with no erros and the
schematic has been saved.
Next
is to simulate the schematic that has been created as R_div. First is
to open the Virtuoso Analog Design Environment (ADE) by clicking on
Launch->ADE L. Then once ADE opens, next is to press
Setup->Simulator/Directory/Host and ensure that "spectre" has been
chosen by default in the Simulator drop down menu.
After
simulation this should be the desired output of the Voltage Divider.
With Vout approximately half of Vin. This simulation was created by
pressing on Analyses->Choose and then selecting "tran", entering
stop time "1", and checking the "enabled" box. Before simulating, be
sure to save the state in cellview for access to the simulation again
at a later date.
The
next step is to create a symbol of the schematic above. To create the
schematic above, I removed the voltage source and the bottom connecting
wires and added pins to the input and the output (bindkey P or
Create->Pin). After doing so, I checked and saved to ensure that
schematic is thoroughly correct.
Next
I created a symbol of the R_div schematic by selecting
Create->Cellview->From CellView and then hit OK twice. Once that
has been done, the symbol appears like the image above.
Then
I deleted the other lines that were not "Vin" or "Vout" and created a
symbol that resembled the voltage divider schematic. I used
Create->Shape->Line to make it look like resistors were
connected. Once that was done, I checked sand saved to ensure no errors
occured.
Next is to create a layout called R_n_well_10k. For the 10k resistor.
10k/800 Ohms = 12.5 or approx 12 lambda.
if
we use a width of 4.5 um then then length would be approx 56 um. I used
56.1 to ensure that it would fit on the grid. (within 0.15) If it did
not fit, the DRC check would give 4 errors since it does not fit on the
grid. After this, the metal1 connections are added to both sides of the
n-well and the res_id layer is added on to the original rectangle (4.5
um x 56.1 um)
After
creating the 10k N-Well Layout, I then extracted the layout
(Verify->Extract) and then opened that file within the Library
Manager to ensure that the output is approximately 10k.
Above
is the layout for R_div, I instantiated the 10k resistor layouts and
connected them using the metal1 drw layer. Then I verified the DRC to
ensure there were no errors. Originially I had an error due to too
small of a spacing between the two resistors.
After
adding the metal1 layer pins to the input, output, and gnd the next
step would be to first DRC the layout to ensure there are no erros
(Verify->DRC). Then to extract the layout (Verify->Extract). Then
to finally LVS the extracted layout and the schematic (Verify->LVS),
once doing so the output above should be the desired results. The
net-lists match.
Lab
description
- Use the n-well to layout a 10k resistor as discussed in Tutorial 1:
The
sheet resistance of the N-well determined by the process information
from MOSIS is approximately 800 ohms per square (796 ohms/sq). This
provides guidance on solving the required length of the 10K N-Well
resistor. The minimum length is approximately 12 lambda which gives a
minimum width of 3.6 um where lambda is 0.30 according to MOSIS.
- Use this n-well resistor in the layout of your DAC:
I used a width of 4.5 um which would be over the minimum width (3.6 um) and used that as lambda. 10K/800 Ohms per square = 12.5lambda
12.5 x 4.5 = Approximately 56 um
I used 56.1 to be within 0.15 to fit the grid, so there are no errors when verifying DRC.
With the measurements 4.5 um x 56.1 um I got a 10.2k resistor after extracting the layout.
-
Enesure that each resistor in the DAC is laid out in parallel having
the same x-position but varying y-positions (the resistors are
stacked).
Here
is the layout of the 10-bit DAC by using the 10K n-well layout in a
stacked formation. All the 10K resistors have the same x-position but
different y-positions. Each resistor is connected to another using a
metal1 layer (Create->Shape->Rectangle/Path) Each pin also uses
the metal1 layer.
-All input and output Pins should be on metal 1
The
input and output pins are implemented with the metal1 layer as seen
above. Also the "gnd!" pin is also used with the metal1 layer and is
indicated as a inputOutput pin. Each resistor has to be at least 5.4 um
apart.At first, when I DRC the first two resistors, I received an error displaying a white box in between the resistors indicating that I need to create more space between the resistors for DRC to work.
- DRC and LVS, with the extracted layout, your design:
Here
is the output of the DRC (Verify->DRC) of the layout I created with
the stacked 10K Resistors using metal1 connections. We can see that
there are no errors found.
Above
is the output of the LVS displaying that the net-lists match using the
layout of my design (extracted) vs the schematic I created in Lab 2 of
the 10-bit Ideal Digital to Analog Converter.
Here is the .zip file of the Lab3 Design directory with the layout, schematic, and Lab 2 files: Lab 3
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