Lab 06 – EE 421L

Authored by Chandon Esplin,

EsplinC2@UNLV.Nevada.edu

10/26/2016 

  

Design, layout, and simulation of a CMOS NAND gate, XOR, and Full-Adder

 

Return to:    C. Esplin EE 421 Labs

 

 

Pre-lab work

 

 

Design, layout, and simulation of a CMOS NAND gate, XOR, and Full-Adder

 

Experiment(s):

 

 

Results:

 

Draft the schematics of a 2-input NAND gate and a 2-input XOR gate using 6u/0.6u MOSFETs (both NMOS and PMOS)

2 Input NAND Gate

2 Input XOR Gate

 

Create layout and symbol views for these gates showing that the cells DRC and LVS without errors

NAND Symbol

XOR Symbol

NAND Extracted

XOR Extracted

NAND Layout

XOR Layout

NAND DRC

XOR DRC

NAND LVS

XOR LVS

 

 

Using Spectre simulate the logical operation of the gates for all 4 possible inputs (00, 01, 10, and 11)

Gate Simulation Schematic

Simulation Results

 

Discussion:

Comment on how timing of the input pulses can cause glitches in the output of a gate

 

As can be viewed in both simulation results, glitches may occur when transitioning from zero to one (on/off) or vice versa. If the simulation was altered to longer rise/fall times or if the periods of the inputs did not match up correctly, both of which reflect non ideal time delay, these minor glitches viewed above could have drastic effects on the output signals.

Using these gates, draft the schematic of the full adder

Create a symbol for this full-adder. Simulate, using Spectre, the operation of the full-adder using this symbol  

Full Adder Schematic

Full Adder Symbol

Full Adder Simulation Schematic

Full Adder Simulation Results

 

 

Layout the full-adder by placing the 5 gates end-to-end so that vdd! and gnd! are routed

DRC and LVS your full adder design

Full Adder Layout

 

 

F.A. Extracted

F.A. DRC

F.A. LVS

 

 

 

 

 

 

 

 

 

 

 

 

 Return to:   C. Esplin EE 421 Labs