Lab 06 – EE 421L
Authored by Chandon Esplin,
EsplinC2@UNLV.Nevada.edu
10/26/2016
Design, layout, and simulation of a CMOS NAND
gate, XOR, and Full-Adder
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to: C. Esplin EE 421 Labs
Pre-lab work
- Back-up all your work from the lab and
the course.
- Go through Cadence Tutorial
4 seen here.
- Read through the lab in its entirety
before starting to work on it
Design, layout, and simulation of a CMOS NAND gate, XOR,
and Full-Adder
Experiment(s):
- Draft the schematics of a
2-input NAND gate (Fig. 12.1), and a 2-input XOR gate (Fig. 12.18) using
6u/0.6u MOSFETs (both NMOS and PMOS)
- Create layout and symbol views
for these gates showing that the cells DRC and LVS without errors
- ensure that your symbol views
are the commonly used symbols (not boxes!) for these gates with your
initials in the middle of the symbol
- ensure all layouts in this
lab use standard cell frames that snap together end-to-end for
routing vdd! and gnd!
- use a standard
cell height taller than you need for these gates so that
it can be used for more complicated layouts in the future
- ensure gate inputs,
outputs, vdd!, and gnd! are all
routed on metal1
- Use cell names that include
your initials and the current year/semester, e.g. NAND_jb_f19 (if it were
fall 2019)
- Using Spectre simulate the
logical operation of the gates for all 4 possible inputs (00, 01, 10, and
11)
- comment on how timing of the
input pulses can cause glitches in the output of a gate
- Your html lab report should
detail each of these efforts
- Using these
gates, draft the schematic of the full adder seen below
- Create
a symbol for this full-adder (example)
- Simulate,
using Spectre, the operation of the full-adder using this symbol
- Layout
the full-adder by placing the 5 gates end-to-end so that vdd! and gnd! are routed
- full-adder
inputs and outputs can be on metal2 but not metal3
- DRC
and LVS your full adder design
Results:
Draft the schematics of a 2-input NAND gate and a 2-input XOR gate
using 6u/0.6u MOSFETs (both NMOS and PMOS)
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2 Input NAND Gate
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2 Input XOR Gate
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Create layout and symbol views for these gates showing that the
cells DRC and LVS without errors
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NAND Symbol
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XOR Symbol
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NAND Extracted
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XOR Extracted
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NAND Layout
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XOR Layout
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NAND DRC
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XOR DRC
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NAND LVS
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XOR LVS
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Using Spectre simulate the logical operation of
the gates for all 4 possible inputs (00, 01, 10, and 11)
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Gate Simulation Schematic
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Simulation Results
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Discussion:
Comment on how timing of
the input pulses can cause glitches in the output of a gate
As can be
viewed in both simulation results, glitches may occur when transitioning from zero
to one (on/off) or vice versa. If the simulation was altered to longer
rise/fall times or if the periods of the inputs did not match up correctly,
both of which reflect non ideal time delay, these minor glitches viewed above
could have drastic effects on the output signals.
Using these gates, draft
the schematic of the full adder
Create a symbol for this
full-adder. Simulate, using
Spectre, the operation of the full-adder using this symbol
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Full
Adder Schematic
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Full
Adder Symbol
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Full
Adder Simulation Schematic
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Full
Adder Simulation Results
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Layout the full-adder by
placing the 5 gates end-to-end so that vdd! and gnd! are routed
DRC and LVS your full
adder design
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Full Adder Layout
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F.A. Extracted
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F.A. DRC
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F.A. LVS
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to: C. Esplin EE 421 Labs