Project, Part 1 - ECE 421L 

Authored by Stephanie Silic

silics@unlv.nevada.edu

November 9th, 2015

   

Project, Part 1 Description:

   

This report will detail the schematics, symbols, and operation of simulations of the following:
 
  1) 8-bit resettable (with clear) up/down counter
  2) 31 stage ring oscillator with a buffer for driving a 20pF off-chip load
  3) a NAND gate
  4) a NOR gate
  5) a PMOS transistor
  6) an NMOS transistor
  7) a voltage divider between a 25k resistor and a 10k resistor
  8) a 25k resistor
 
Report:
   
  1) 8-bit resettble (with clear) up/down counter
 
This 8-bit up/down counter is designed with D flip flops. A clear is implemented by the NAND gates in the following schematic. When the clear input is high, a 0 will be transmitted to Q, resetting the flip flop. The clear doesn't have to wait for the rising edge of the clock, hence it is an asynchronous clear.
 
Note a vdd pin is needed, so that each circuit in the project can be connected to its own vdd pad.
 
The DFF schematic:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/DFF_clear_circuit.JPG
 
The symbol is created as follows:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/DFF_with_clear_symbol.JPG
 
Now, to create the counter from this D flip flop, we will need to have 8 of them, DFF<0:7>, with the clock signal for the second flip flop coming from either Q or QNOT of the previous flip flop. This clock will determine whether the counter is counting up or down.
The schematic and symbol for the DFF register cell are created as follows:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Counter_TG_cell_schematic.JPG http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Counter_TG_cell_symbol.JPG
 
Now, the last flip flop, DFF<7>, will not need to create the clock signal for another flip flop, so we do not need the transmission gates for it. Thus, we use the DFF symbol to create 7 flip flop cells, and add the 8th one without the transmission gates.
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Counter_schematic.JPG
 
The symbol is created:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Counter_symbol.JPG
   
Finally, we can take the symbol for the 8-bit counter and simulate its operation:

http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Counter_sim_schematic.JPG
 
Simulation for all 8 bits, counting up (up is 5V), then clearing:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Sim_counter_up_clear.JPG
 
Simulation of all 8 bits counting down, then clearing:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Sim_counter_down_clear.JPG
 
This simulation shows the counter counting up, then down, then up again.
Note: the vertical highlight marks emphasize the rising edge of the clock signal, which is when the register will "load" the new value.
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/Sim_counter_up-and-down.JPG
 
  2) 31 Stage ring oscillator:
 
For the ring oscillator, we need to first create a buffer. According to lecture notes on CMOSedu.com, the easiest way to make a good buffer is to use one inverter with both the NMOS and PMOS transistors having a multiplier of 8, then another inverter with multipliers of 64.
This is done below:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/buffer_schematic.JPG    http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/buffer_symbol.JPG
 
Now we create the schematic and symbol for the 31-stage ring oscillator using buses on the inverter, then buffering the output with the buffer shown above.
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/ring_osc_schematic.JPG   http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/ring_osc_symbol.JPG
 
Finally, the oscillator can be simulated driving a 20pF load, as shown below:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/ring_osc_sim_schematic.JPG
 
The output is as follows, with a frequency of about 1/5.392ns = 185MHz:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/ring_osc_sim.JPG
 
  3) NAND gate:
 
The NAND gate had already been created in a previous lab, but with a global vdd! instead of the vdd pin required here.
The circuit is the same, however:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NAND_circuit.JPG    http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NAND_symbol.JPG
 
A circuit for simulating the operation of the NAND gate is created:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NAND_sim_sch.JPG  
 
  Truth Table for NAND gate:
  
ABAnandB
001
011
101
110
 
The results match the truth table:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NAND_Sim.JPG
 
  4) NOR gate:
 
Once again, the NOR gate has already been studied in this class.
The schematic and symbol are as follows:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NOR_circuit.JPG   http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NOR_symbol.JPG
 
A schematic for simulating the operation of the NOR gate:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NOR_sim_sch.JPG
 
NOR truth table:  
ABAnorB
001
010
100
110
 
The results confirm the operation of the NOR gate:
   
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/NOR_Sim.JPG
 
  5) inverter:
 
The schematic and symbol are as follows:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/inverter_circuit.JPG     http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/inverter_symbol.JPG
 
To simulate the transient behavior of the inverter, the following circuit is constructed:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/inverter_sim_sch.JPG
 
The outupt is as follows:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/inverter_transient_behavior-td.JPG
 
  6) PMOS transistor:
 
We create a straightforward schematic, symbol, and circuit for simulation (left to right, respectively):
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/pmos_circuit.JPG   http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/pmos_symbol.JPG    http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/pmos_sim_sch.JPG
 
The ID-VDS curve is shown on the left, and the ID-VGS curve on the right:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/pmos_ID-VSD.JPG  http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/pmos_ID-VSG.JPG
 
  7) NMOS transistor:
   
Similarly, the PMOS transistor element is constructed:
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/nmos_circuit.JPG  http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/nmos_symbol.JPG   http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/nmos_sim_sch.JPG
 
Once more, the ID-VSD (left) and ID-VSG (right) curves are simulated as follows:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/nmos_ID-VDS.JPG  http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/nmos_ID-VGS.JPG
 
  8) voltage divider:
   
The voltage divider is created with a symbol:
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/divider_circuit.JPG  http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/divider_symbol.JPG
 
The simulation of the voltage divider should give Vout = Vin(10k/35k) = 0.286V:
 
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/divider_Sim.JPG
 
 
  9) 25 k resistor:
 
We create a simple schematic to plot the IV curve of the resistor as follows.
 The plot is what we expect:
http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/25k_res_sim_schematic.JPG  http://cmosedu.com/jbaker/courses/ee421L/f15/students/silics/proj/25k_res_sim.JPG
 

  This concludes the report for the first part of the project.

All schematics and simulations can be found in my design directory: proj.zip
 
 
 
 

   

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