Lab 3 - ECE 421L
The first step to layout a DAC is to start at the very bottom. This means that we will first layout a 10K n-well resistor. From MOSIS, the sheet resistance is about 800 ohms/square. I choose the width of the n-well to be 4.5 and using the equation 10k=800 * (L/W). We can calculate the length of the n-well to be 57. Although these L and W do not produce exactly 10k, we needed Ls and Ws to be divisible by the grid (which is .15).
To measure the width and length of the resistor we can use a ruler. The bind key for a ruler is k.
Below are two pictures showing the value of the n-well resistor and measuring the W and L using a ruler.
Extracted view shoing value of n-well resistor
Measure the W and L of the n-well resistor via ruler
Below are a few pictures showing the layout, DRC, and LVS of a single bit of the DAC. Instead of layout out 3 10k n-well resistors for a single bit again, we can call the resistor we layed out above as an instance.
Layout of a single bit | DRC with no errors | LVS (netlist match) |
Layout of 10 bit DAC | No DRC Errors | |
LVS pass (netlist match) |
In order to sim the layout of the DAC, we will have to obtain an extracted view (this is also done before performing the LVS check). After this we can launch ADEL got to setup -> environment and then add the word "extracted" before schematic on the first line. This will tell the simulator to simulate the extracted view (layout) instead of the schematic.
Below are a few simulations showing the difference between the schematic simulation and extracted layout simulation.
Schematic simulation of DAC | Layout simulation of DAC |
Schematic simulation of 10k load | Layout simulation of 10k load |
Schematic simulation of a 10k and 10pF load | Layout simulation of a 10k and 10pF load |
Schematic simulation of delay on MSB | Layout simulation of delay on MSB |