Lab #8: MOSIS_chip4 

Authored by:

Brian Kieatiwong, kieatiwo@unlv.nevada.edu

Cassandra Williams, willi131@unlv.nevada.edu

Mari Gilligan  mgill19@unlv.nevada.edu

Russ Prado, prador@unlv.nevada.edu

11/30/2015

Generating a Test Chip Layout for submission to MOSIS for Fabrication

In this lab we are putting together a test chip that will be submitted for MOSIS fabrication.

The following structures will be included within this test chip:

• One up/down counter with clear
• The outputs of your counter should be buffered before connecting to a pad
• A 31-stage ring oscillator with a buffer for driving a 20 pF off-chip load
• NAND and NOR gates using 6/0.6 NMOSs and PMOSs
• An inverter made with a 6/0.6 NMOS and a 12/0.6 PMOS
• Transistors, both PMOS and NMOS, measuring 6u/0.6u where all 4 terminals of each device are connected to bond pads (7 pads + common gnd pad) 
• Note that only one pad is need for the common gnd pad. This pad is used to ground the p-substrate and provide ground to each test circuit
• Using the 25k resistor laid out below and a 10k resistor implement a voltage divider (need only 1 more pad above the ones used for the 25k resistor) 
• A 25k resistor implemented using the n-well (connect between 2 pads but we also need a common gnd pad)   

MOSIS_Chip4 Test Instructions:

• Up/Down Counter(8-Bit):
• To power is device, connect PIN<23> to a power supply
• With this counter, we can decide whether it will count up or down. With PIN<33>, a HIGH input will enable the counter to count up while a LOW input will enable a down counter.
• A Clear pin is also included in PIN<29>. With a HIGH input, we can clear all 8 outputs back to low, resetting the counter.
• A clock signal is needed at PIN<25> to begin the count.
  
• Outputs:
• S0=PIN<24>
• S1=PIN<26>
• S2=PIN<27>
• S3=PIN<28>
• S4=PIN<30>
• S5=PIN<31>
• S6=PIN<32>
• S7=PIN<34>
• 31-Stage Ring Oscillator:
• To power is device, connect PIN<8> to a power supply
• The output can be measured at PIN<10>
• NAND and NOR Gates:
• NAND Gate
• To power is device, connect PIN<3> to a power supply
• Input A is located at PIN<4>
• Input B is located at PIN<2>
• Output AnandB is located at PIN<1>
  
• NOR Gate
• To power is device, connect PIN<39> to a power supply
• Input A is located at PIN<37>
• Input B is located at PIN<36>
• Output AnorB is located at PIN<38>
• Inverter:
• To power is device, connect PIN<6> to a power supply
• Input A is located at PIN<7>
• Output Ai is located at PIN<5>
• Transistors(NMOS and PMOS):
• NMOS
• Gate is located at PIN<16>
• Body is already connected to the ground pin. Make sure that PIN<20> is connected to ground.
• Source is located at PIN<15>
• Drain is located at PIN<17>
• PMOS
• Gate is located at PIN<11>
• Body is located at PIN<14>. In order for this PMOS to avoid body effect, this pin should be connected to Vdd
• Source is located at PIN<13>
• Drain is located at PIN<12>
• MOSIS_Chip4 Padframe:Voltage Divider and Resistors(25k and 10k):
• 25K Resistor
• To test this resistor, use PIN<>. The other end of the resistor is already connected to ground at PIN<20>
• Make sure to connect PIN<20> to ground.
• 10k Resistor
• Voltage Divider
• Input pin is located at PIN<21>
• Output pin is located at PIN<19>