Lab 6 - ECE 421L 

Ting Yu,

Email: yut2@unlv.nevada.edu

October 17, 2014

  

Lab description: Design, layout, and simulation of a CMOS NAND gate, XOR gate, and Full-Adder.

Prelab:

Go through Tutorial 4 from here

 

Create a new schematic for NAND gate. Lay it out with pmos and nmos. It should look like the following.

 

Create a new symbol

 

Open the layout view. To get rid of the pins in the middle of the nmos. Select the first and second nmos. Go to edit->hierarchy->flatten. Unselect preserve pins geometries. Select flatten pcells, and flatten vias. Delete the vias and metal 1 in the middle. The new layout should look like the following. 

 

DRC and LVS for no error

 

Simulate the NAND gate. Create a new schematic. 

  

Start ADE-L. Go to setup->model to include the following models

 

Set Analog Stimuli for Global sources

  

Set the source parameter as the following

 

Set Analyses to tran and let it run for 100ns

 

Press run. You should get the following result.

   

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Main lab:

 

Lastly, back up all the files of Lab6