Lab 8 Characterization of the CD4007 CMOS Transistor Array- EE 420L

Authored by Jeremy Garrod

4/5/2017   

garrod@unlv.nevada.edu

Pre-lab work

Lab Work


In order to obtain the parameters of  both the NMOS and the PMOS, a 1k resistor was placed in the source. The gate voltage was adjusted until the voltage across the resistor starts to change, this is the threshold voltage of the MOSGET. This resistor causes a voltage drop, which can be measured and used to calculate the current. Once the curernt is known, the source voltage can be measured, which allows the gate-source and source-gate votlages to be calculated. Once all of that has been completed, the square-law equation can be solved for the transconductance, which along with the rest of the level 1 parameters, can be found by plugging in all of the numbers above. The topologies used along with the hand calculations are found below.

 
 




    1. ID v. VGS (0 < VGS < 3 V) with VDS = 3 V 
    2. ID v. VDS (0 < VDS < 5 V) for VGS varying from 1 to 5 V in 1 V steps, and 
    3. ID v. VGS (0 < VGS < 5 V) with VDS = 5 V for VSB varying from 0 to 3 V in 1 V steps. 
While an oscilloscope could be used to generate an IV plot, I have not done that in a while and could not remember how to do it. Instead, I took discrete measurements at various points, arranged it in a table, and used EXCEL to generate the IV plots.

NMOS

1.  


VGSID(mA)
00
0.50
10.0005
1.50.0898
20.4
2.50.858
31.518


2.

I had some issues with the power supply, so I was not able to get a few of the measurements. I ran my simulations with the corrected KP in order to get a graph that was similar to mine and extrapolated the data from there.


VGS12345
VDS
10.0050.26190.841.232.1
20.0050.35211.162.153.65
30.0050.35611.5082.914.3
40.0060.35891.5203.2444.791
50.0070.36151.5383.2655.32

3.

I was not able to figure out how to do this experiment.

PMOS

1.



VSGID(mA)
00
0.50
10
1.50.0027
20.1322
2.50.4616
2.70.6889
2.80.8980
30.9324

2.

Just as with the NMOS, I had some issues with the power supply. I was not able to get a few of the measurements. I ran my simulations with the corrected KP in order to get a graph that was similar to mine and extrapolated the data from there.



VGS12345
VDS
10000.887931.1462
200.00301151.22912.8136
300.0030.4691.84374.286
400.0030.83972.31855.014
500.0041.032.4435.1615

3.

I did not able to figure out how to complete this experiment.

 

NMOS



 

While the shape is similar to my experimental plots, the values are quite a ways off. In order to fix this, my value for KP needs to be adjusted. I calculated a value of roughly 2.6uA/V^2, when in reality the KP should be close to 5.5uA/V^2. The results of my adjusted parameters are below. The new results are very close to my experimental values.



PMOS





The shape and values are fairly close with a similar shape. The KP value that I calculated is a little bit too high. A KP of around 9uA/V^2 gives me a waveform that is closer to what I measured in the lab.






 

I could not figure out what I was doing wrong on this part. I built the circuit using all three of the AC test circuits and I could not get any of them to work. The waveform below is what I kept getting as an output. I followed the wires multple times and double checked my circuit. Nothing seemed to work. The circuit did not invert and had a lot of noise on the output.

 





In the simulations, I get a rise time of 28ns and a fall time of  30.9ns. These times are well within the values stated on the data sheet. These values are with the adjusted KP values from the experiment before.



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