ECE 421L - Lab 8

John Huang

Huangj19@unlv.nevada.edu

Spring 2015

 

For this lab we will be using the CD4007 CMOS transistor array.

We will be generating SPICE level = 1models with the experimental values we obtain

We will simulate using the SPICE level models and compare them to the LTspice models

The MOSFETS used will be powered by a single 5V power supply

 

For all our measurements we only measured ID with VGS or VDS individually because we did not know how to sweep them on the oscilloscope.

We recorded the data and used excel to plot our ID v. VGS/VDS/VSG/VSD curves.

 

1. ID v. VGS (0 < VGS < 3V) with VDS = 3V 

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/1.JPG

  

2. ID v. VDS (0 < VDS < 5V) for VGS varying from 1 to 5V in 1V steps

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/2.JPG

 

3. ID v. VGS (0 < VGS < 5V) with VDS = 5V for VSB vraying from 0 to 3V in 1V steps

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/3.JPG

 
Assuming that the length of the NMOS is 5 um and its width is 500 um calculate the oxide thickness if Cox = C'ox*W*L = 5pF
http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/4.JPG
 

With this data we created a level = 1 MOSFET model with only parameters of VTO, GAMMA, KP and TOX.

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/5.JPG
The CD4007models.txt can be downloaded here.
 
With these model parameters we simulate our previous experiments and compare them to each other.
ID v. VGS (0 < VGS < 3V) with VDS = 3V
http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/6.JPG

 

ID v. VDS (0 < VDS < 5V) for VGS varying from 1 to 5V in 1V steps

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/7.JPG

 

ID v. VGS (0 < VGS < 5V) with VDS = 5V for VSB varying from 0 to 3V in 1V steps

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/8.JPG

 

As you can see our simulations match our experimental simulated graphs very closely.

 

Now we repeat these steps for the PMOS placing VDS, VGS, VSB with VSD, VSG, VBS respectively.

 

4. ID v. VSG (0 < VSG< 3V) with VSD = 3V

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/9.JPG

 

5. ID v. VSD (0 < VSD < 5V) for VSG varying from 1 to 5V in 1V steps

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/10.JPG

 

6. ID v. VSG (0 < VSG < 5V) with VSD = 5V for varying VBS from 0 to 3V in 1V steps

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/11.JPG

  

Now we can compare these experimental simulated graphs with our simulations

ID v. VSG (0 < VSG< 3V) with VSD = 3V

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/12.JPG

 

ID v. VSD (0 < VSD < 5V) for VSG varying from 1 to 5V in 1V steps

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/13.JPG

  

ID v. VSG (0 < VSG < 5V) with VSD = 5V for varying VBS from 0 to 3V in 1V st

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/14.JPG

 

Experimentally, similiar to what is seen on the datasheet (AC test circuits seen on page 3 of the datasheet), measure the delay of an inverter using these devices.

Remember the loading of the scope probe is around 15pF and there is other stray capacitance, say another 10pF.

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/15.JPG

 

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/16.jpg

 

Using your model simulate the delay of the inverter and compare to measured results.

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/17.JPG

We measured a total time delay of 23.1ns while our simulation showed around 31.4ns.

This is very close as we are not measuring the time delay at exactly the same spot.

  

Conclusion:

From this experiment we can see how we are able to see how the CD4007 CMOS transistor array behaves.

We can compare how the drain current of each mosfet behaves with varying voltages of VGS, VDS, VSB, VSG, VSD, VBS.

From the graphs we can see when the mosfets start to turn on and the points at when it starts to saturate.

We are also able to make our own spice models from these experiment data results in order to use them in LTSpice.

We were able to compare our spice models by measuring the time delay of the inverter in the CD4007 using the AC test circuit inverter example.

  

Back up:

Make sure you back up your whole CMOSedu folder with all your labs by compressing the folder and sending it to yourself through email.

http://cmosedu.com/jbaker/courses/ee420L/s15/students/huangj19/lab8/18.JPG

 

 

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