Lab 6 - EE 420L
based
on these charts it is safe to assume we are going to be operating near
the threshold voltage because if VGS was even 3 volts in the nmos it
would generate 500mA Drain Current and vs would become 500V in the
first three schematics due to the 1k resistor placed there. therefor it
is safe to estimate we will be operating around 1.8V VGS,VSG with a
very small current and around 10ms
Gain: 0.92 hand calcualtions: id=gm(vin-vout) id=vout*1k vout*1k=gm(vin-vout) vout(gm+1k)=gm*vin vout/vin=1/(1+1k/gm) gm is about 10ms from above chart 1/(1+1k/10m) gain=1/10M hand calcualtions must be off | |
Rin using a 33kohm Resistor Rin=33kohm Hand calcualtions 50k||100K=33k | |
Rout using 130ohm resistor Rout is about 130ohm | |
Gain: 0.80 hand calcualtions: id=gm(vin-vout) id=vout*1k vout*1k=gm(vin-vout) vout(gm+1k)=gm*vin vout/vin=1/(1+1k/gm) gm is about 10ms from above chart 1/(1+1k/10m) gain=1/10M hand calcualtions must be off | |
Rin using a 33kohm Resistor Rin=33kohm | |
Rout is about 193ohm |
Gain: -5.4 hand calcualtions: gain= -RD/(1/gm+RS) -1k/(1/10m+100) -1k(200) -5 | |
Rin using a 33kohm Resistor Rin=33kohm | |
Rout using a 1kohm Resistor Rout=1kohm | |
Gain: -2.9 hand calcualtions: gain=- RD/(1/gm+RS) -1k/(1/10m+100) -1k(200) -5 gm must be greater for this pmos | |
Rin using a 3.3kohm Resistor Rin=3.33kohm | |
Rout using a 1kohm Resistor Rout=1kohm |
Gain: 4.9 hand calcualtions: gain=RD/(1/gm+RS) 1k/(1/10m+100) 1k(200) 5 | |
Rin using a 200ohm Resistor Rin=200ohm hand calculations 100+1/gm=200 gm=10ms | |
Rout using a 1kohm Resistor Rin=1kohm | |
Gain: 5.0 hand calcualtions: gain=RD/(1/gm+RS) 1k/(1/10m+100) 1k(200) 5 | |
Rin using a 330ohm Resistor Rin=200ohm hand calculations 100+1/gm=330 gm=23ms (see above results) | |
Rout using a 1kohm Resistor Rin=1kohm |
100k resistor 1/52 voltage divider: vin=2/52=0.038 2.5/0.038=65 gain=100k(gmn+gmp) | |
150k resistor 1/52 voltage divider: vin=2/52=0.038 3.66/0.038=95 gain=150k(gmn+gmp) |