On pages 144 and 145 you discuss how V_DS,sat is not exactly

V_GS - V_THN. Why is the channel charge distribution, Q'_I (y) not

exactly constant as you move away from the source? Why does

Q'_I (y) become zero earlier at the drain?

When we increase the drain potential we attract electrons to

the surface of the MOSFET and enhance the channel (this is

drain induced barrier lowering, DIBL, discussed on page 154).

This causes the channel charge distribution to become uneven

and lowers the value of V_DS needed to saturate the device.

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