Lab 4 - ECE 421L
Authored
by Anthony Peytchev,
Email: peytchev@unlv.nevada.edu
9/20/2023
Pre-Lab
Finish Tutorial 2
Copy Tutorial 1 into Tutorial 2 and make sure to select Updated Instances so the library can be independant.
Next Create a Cell View Named NMOS_IV_3
Open the shematic then press i to instantiate a transistor:
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It will look like this
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Add Pins to it:
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Go to Create then Create Symbol -> Cell View -> Create from Cell View
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Delete everything except the 3 Pins
Select everything and press q to view properties
Draw the symbol to look like a transistor
We will then add vdc to set it up for sim
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Go to launch ADE L and load these settings for sim.
We run the sim to get the output
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Next we can layout a nmos by creating a layout view for NMOS_IV_3 and adding an instance with the length of 6u and width of 0.6u along with a ptap.
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We can add m_Ppoly cell ato connect the poly rectangle from NMOS to it. Then we can add metal 1 connections to it.
Once this is done we can extract our layout to see the value.
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PMOS
Now we repeat similar steps but this time for pmos
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Create layout of PMOS using a pmos cell and ntap, then you can extract the layout and get this view.
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Lab 4
4 different schematics and simulations for 4 different IV curves
- A Simulation of ID v. VDS of an NMOS device for VGS varying from 0 to 5 V in 1 V steps while VDS varies from 0 to 5 V in 1 mV steps.
- 6u/600n width-to-length ratio.
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Simulation:
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- A schematic for simulating ID v. VGS of an NMOS device for VDS = 100 mV where VGS varies from 0 to 2 V in 1 mV steps.
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Simulation:
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- A
schematic for simulating ID v. VSD (note VSD not VDS) of a PMOS device
for VSG (not VGS) varying from 0 to 5 V in 1 V steps while VSD varies
from 0 to 5 V in 1 mV steps.
Simulation:
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- A schematic for simulating ID v. VSG of a PMOS device for VSD = 100 mV where VSG varies from 0 to 2 V in 1 mV steps.
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- Lay out of a 6u/0.6u NMOS device
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- Make a corresponding schematic so you can LVS your layout.
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- Lay out of a 12u/0.6u PMOS device and with all 4 MOSFET terminals connected to probe pads.
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DRC:
Extracted:
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- Corresponding schematic for LVS
LVS
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LVS:
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Backup:
Backed up everything to zip file
return