Project - EE 421L 

Author: Jazmine Boloor

Email: boloor@unlv.nevada.edu

Date: November 25, 2020

 

Project Guidelines:

Design, layout, and simulate a digital receiver circuit that accepts a high-speed digital input signal D and Di (a differential pair connected to your circuit from, for example, a twisted pair of wires such as in an Ethernet cable). D and Di are complements so, for example, if D is 5V then Di is 0V and output = 1. Another example, when D is 1V and Di is 2V then output = 0. At high-speeds and long distances the voltages received aren't full digital logic levels (i.e., 5V and 0V), hence the need to design, and use, a high-speed digital receiver circuit. Ideally, when D > Di the receiver outputs a 1. When D < Di the receiver outputs a 0. Base your design on the topology seen in Fig. 18.23. Try to design for high-speed and low-power. Characterize your design (in sims) and the trade-offs. For example, show that you get higher-speed if you use more energy (burn more power). See if you can get, in this 500 nm process, 250 Mbits/s (a bit width of 4 ns) with an input voltage difference of, for example, 250 mV (with D and Di swinging back and forth between 2.75V and 3V, for one of many examples, your circuit outputs the correspondingly correct values). Note that while Fig. 18.23 shows one inverter on the output you may find, for example, that two inverters work better (at the cost of power). Use a table to summarize your design's performance.


Design of Digital Receiver Circuit:

My initial design of the digital receiver circuit is shown below. It follows the figure 18.23 topology. This circuit uses an N flavor input buffer (bottom) in parallel with a P flavor input buffer (top). Both input buffers use a self-biasing mechanism, which makes them ideal for low power designs (as a biasing circuit is not necessary). Using the two buffers in parallel has several benefits, such as better ensuring a full GND-VDD voltage swing, decreasing the offset (seen when just the PMOS flavor is used), and decreasing the propagation delays with low input voltages (seen when just the NMOS flavor is used). The design uses the C5 process; all PMOS are 20/1 and all NMOS are 10/1. Alongside it is the symbol view created for it.

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This circuit produced the simulation results seen below when a random string of 1’s and 0’s was inputted with a 250mV input voltage difference (Vinm = 1101 0010 0010, Vinp = 0010 1101 1101). The simulation shows that when Vinm is greater than Vinp, the output goes low. When Vinm is less than Vinp, the output goes high. As the two inputs are complements, the digital receiver is working as expected – the output is 0010 1101 1101, following Vinp. Note that the output does not fully reach VDD or GND, and there is a noticeable delay when the output switches. These are the things I wanted to change.

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Tradeoffs Considered with the Final Design:

The initial simulation above is not very clean, which prompted me to add another inverter with 10/1 device sizes to the design. Additionally, I reduced the widths of the PMOS devices in the buffers to 6u, as it did not noticeably change the results. Decreasing the width of devices lowers layout size and power consumption, but also limits the speed that current can pass through.

This circuit was to be designed for high speed and low power. The additional inverter mentioned above obviously came at the cost of power consumption, but it was necessary for good operation (a third inverter would slightly improve the results as well but was not included because of the additional power it would consume). To decrease the power consumption, I also modified the bottom NMOS and top PMOS seen in the original design by increasing their lengths from 0.6u (minimum) to 2.4u. Increasing the lengths of the tail MOSFETS make the overall power consumption go down, as the circuit cannot run as fast (hence, the speed of the design was slightly slower). This happens because current has a longer path to conduct through when a minimum length device is not used. Nonetheless, the design of the circuit after these changes both fit the guidelines of the project and my liking.

The final design of my project is shown below, followed by its output when Vinm and Vinp are fed the same random string of 1’s and 0’s as above with a 250mV difference. Clearly, this device operates better.

It should be noted that because only one additional inverter is used, the polarity of the output is flipped.

The bit width is 4ns, separated clearly on the time axis. Vinm = 1101 0010 0010, Vinp = 0010 1101 1101. The output is indicated on the figure (1101 0010 0010), it follows Vinm, as expected (because polarity is flipped).

 
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Power Comparisons

To find out how much power the circuit needed to be supplied, the following equation can be used: 

To find the average current through the power supply, I plotted the current through the VDD source and took its average. Note that when I did this, I used inputs with 8 ns periods and clipped the current from 24 ns to 32ns, as the current was the circuit starts up is much higher than its average for the rest of its operation. The images below show the average current plot and calculation when the input voltages swing between 2.75 and 3 volts.

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Using this number in the average power equation, we have:

I repeated this process several times with different input voltages. The table below summarizes the average current and power supplied to the digital receiver by the power source. Again, one of the major tradeoffs to consider in this design involved power and speed. The power that was saved with changes in the original design is depicted. This (around half) decrease in power came at the cost of a slightly slower speed, but the device still operated well beyond the project guidelines.

Input Voltages

Difference in Input Voltage

Average Power Supplied to Original Design

Average Power Supplied to My Design

Average Current Pulled from VDD in My Design

3 V and 2.85 V

150 mV

9.67 mW

5.37 mW

1.073 mA

3 V and 2.75 V

250 mV

8.79 mW

4.51 mW

901.2 µA

1 V and 1.5 V

500 mV

7.59 mW

3.45 mW

689.3 µA

1 V and 2 V

1 V

6.87 mW

2.99 mW

598.2 µA

2 V and 4 V

2 V

6.26 mW

2.86 mW

572.8 µA

2 V and 5 V

3 V

6.02 mW

2.79 mW

558.2 µA

0 V and 4 V

4 V

5.09 mW

2.27 mW

453.1 µA

0 V and 5 V

5 V

4.91 mW

2.23 mW

446.6 µA

Simulating the Digital Receiver Circuit:

The following section of this report will further characterize and test the design through simulations. These simulations show the circuit working under a variety of test conditions. All use a variation of the following schematic:

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Input Voltage and Bit Width Effects:

The following table shows the performance of the design under different input voltages and bit widths.

Parameters Being Tested / Additional Notes

Simulation

·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 250 mV.

·        Rise/Fall time = 500ps

 

The circuit can operate under these conditions.

 

 

 

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·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 150mV

·        Rise/Fall time = 500ps

 

The circuit can operate under these conditions.

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·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 100mV

·        Rise/Fall time = 500ps

 

The circuit can operate under these conditions, but accuracy begins to deteriorate very slightly.

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·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 50mV

·        Rise/Fall time = 500ps

 

The circuit precision deteriorates under these conditions. Therefore, accuracy at 250 Mbits/s with an input voltage difference smaller than 50 mV will begin to worsen.

 

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·        500 Mbits/s (a bit width of 2 ns) with an input voltage difference of 250 mV

·        Rise/Fall time = 500ps

 

The circuit can operate under these conditions.

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·        500 Mbits/s (a bit width of 2 ns) with an input voltage difference of 150 mV

·        Rise/Fall time = 500ps

 

The circuit can operate under these conditions, but accuracy begins to deteriorate slightly. Therefore, accuracy at 500 Mbits/s with an input voltage difference smaller than 150 mV will begin to worsen.

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·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 3 V

·        Rise/Fall time = 1ns

 

The circuit can operate under these conditions.

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·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 5 V

·        Rise/Fall time = 1ns

 

The circuit can operate under these conditions.

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These simulations prove that the device works well past the design guidelines for both bit width and input voltage difference.

Temperature Effects:

To show the way the circuit operates with changes in temperature, a parametric analysis of the output can be simulated. A benefit to using this topology for the rail to rail input buffer is that it is resistant to changes in temperature. This holds mostly true for my design. I swept the temperature from 0 to 100˚C and provided the output simulations for a few different inputs. All show relatively small variations in output.

Parameters Being Tested / Additional Notes

Temperature Sweep Simulation

·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 250 mV.

·        Rise/Fall time = 500ps

 

Around 5 mV change in voltage over 100˚

 

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·        250 Mbits/s (a bit width of 4 ns) with an input voltage difference of 5V

·        Rise/Fall time = 1ns

 

Around 1mV change in voltage over 100˚

 

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·        500 Mbits/s (a bit width of 2 ns) with an input voltage difference of 250 mV

·        Rise/Fall time = 500ps

 

Around 350 mV change in voltage over 100˚.

This simulation saw the largest variation in output with change in temperature, which was to be expected as it tested the smallest bit width.

 

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This concludes the simulation section of the project report. The next section will show the layout of the design.

Digital Receiver Layout

The below images show the pieces that I used in my digital receiver layout. Each was individually laid out and verified. The last section shows my final layout.

NMOS Flavor Input Buffer Layout, Extracted View, and DRC/LVS Verifications:

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PMOS Flavor Input Buffer Layout, Extracted View, and DRC/LVS Verifications:

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12u/6u (Left) and 6u/6u (Right) Inverters Layout, Extracted View, and DRC/LVS Verifications:

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Final Rail to Rail Input Buffer Layout, Extracted View, and DRC/LVS Verifications:

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Zipped up directory of the project: 421 Lab Project Zip

The last step I took in completing this lab was backing up all my work to my Google Drive. This concludes the lab work.

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