Lab 5 - EE 421L 

Authored by Christopher Mikhael,

Email: Mikhaelc@unlv.nevada.edu

10/9/2014


Objective:

For this lab we are designing two inverter circuits using an NMOS and PMOS device. After these devices are layed out and LVSed we will then create a schematic with different capacitor values to view the effects different sized capacitors have on the inverter.

Creating a 12u/6u inverter and the 48u/24u inverter.

To create this schematic we put a PMOS and an NMOS together. We used a PMOS of width 12u and an nmos of width 6u. This is important becuase it balances the two transistors so they are equal and opposite. We also created the symbol for these schematics so they can easily be used later. For the 48u/24u we used the same circuit as before except used a multiplier to symbolize 4 pmos and 4 nmos transistors connected together. This is more efficent then actually creating the 8 transistors manually. This is shown below:

12u/6u inverter48u/24u inverter
Schematic
Symbol

After creating the proper schematic and symbol we then move on to making the two layouts. This is done by first creating the instance by going to NCSU_TechLib_ami06 and adding both the PMOS and NMOS devices being sure specify the correct width for each. We then perform the same operation for the 48u/24u but we incluce the multiplier to the schematic. This creates 4 nmos devices and 4pmos devices connected together. Next we will have to add the voltage and ground to the circuit. This is done by placing an ntap as VDD for the PMOS  transistor. Be sure to use 2 rows of contacts and generous amount of columns. This ensures a good connection. Next obtain a ptap from the same library and place it next to the NMOS device. This will be our ground. The naming convention used for the ground and Vdd is gnd! and vdd! all in lower case. This makes it easier to connect to these pins in schematics. We then create the correct connections between the pads as shown below:

12u/6u inverter48u/24u

After making the proper connection extract both the layouts so they can be LVSed. This is done below:

Simulations

Simulations were performed to show how the inverter responds to different capacitive levels on the two different inverters. The simulations were also performed again using the Ultrasim functionality which helps create fast transient simulations at the expense of quality simulations. The results are shown below:

Graphs for the 12u/6u inverter using  spectre:

SchematicsSimulations
100f
1p
10p
100p

From these results we can clearly see that as the capcitance increases in value the less it acts as an inverter due to the delay of created by the capacitor. The  capacitor delays the discharge of the components in the circuit. This is clearly shown in the 100p capacitor where the line is almost level because of the capacitances slow discharge.

Next we will show the ultra simulations for the 12u/6u inverter:

SchematicSimulation
100f
1p
10p
100p

These simulation are very similar to the spectre simulation, but seems to contain as many data points as spectre which is more percise. But for this application it is suitable to aquire data using the ultra sim because the results are the same for the two methods of simulations.

Next we will look at the 48u/24u inverter with varying capacitance:

SchematicSimulation
100f
1p
10p
100p

If we compare the 100pF capacitance of the 12u/6u inverter with that of the 48u/24u inverter we can clearly see that the capacitance is less effective at flattening the 48u/24u. With a larger inverter the capacitor has a weaker effect on the output signal as shown above.

Using the Ultrasim for simulation:

SchematicSimulation
100f
1p
10p
100p

We can see that the fast sim shows a less smooth simulation than the spectre alternative. This is very negligable in this application. When using transient analysis the Ultrasim is a good alternative to spectre as long as the data is not datapoint intensive.

Lab 5 directory: CM_lab5.zip

            

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