Lab 4 - ECE 421L 

Authored by Elizabeth Baldivias,

baldivi3@unlv.nevada.edu

 

  

IV characteristics and layout of NMOS and PMOS devices ON's C5 process

 

 

Generate 4 schematics and simulations 

1.  A schematic for simulating ID v. VDS of an NMOS device for VGS varying from 0 to 5V in 1V steps while VDS varies from 0 to 5V in 1mv steps using a 6u/600n.

 
 
First step was to create a schematic. I added an NMOS with 6u/600n dimensions and added two voltage sources. One equal to VGS and the other equal to zero.
  
schematic_NMOS_ID_VGS.JPG

 


Now, I was ready to launch ADE-L. I went to Setup->Model Libraires to add ami06Nm. I added the VGS variable by going to Variables->Edit and setting VGS to 0. I then set the analysis to dc, checked component parameter, set the compenent name to /V1 (since that is VDS and that is what I want to sweep). Set the sweep range to start stop from 0 to 5, the sweep type to Linear, and the step size to 1mV. In result this is the launch explorer.
 
launch_NMOS_ID_VGS.JPG

 

To run the simulation with varying VGS I went to Tools->Parametric Analysis and set the parameters to the ones seen below.
 
parametric_analysis_NMOS_ID_VGS.JPG
 

Once I hit the run button, this is the output I received.
 
output_NMOS_ID_VGS.JPG 

 
Now, for the next task.

2. A schematic for simulating ID v. VGS of an NMOS device for VDS=100mV where VGS varies from 0 to 2V in 1mV steps using 6u/600n NMOS.

I used an NMOS4 for this simulation, I set the first voltage to zero and the second voltage to VDS. This gives the following schematic.
 
 schematic_NMOS_ID_VDS.JPG

 
After launching ADE-L I set the analysis to dc with component parameter. In component name I put /V0 to linearly sweep from 0 to 2V in 1mV steps. I added a variable VDS and set it to 100mV. This gave the following launch.
 
launch_NMOS_ID_VDS.JPG
 
Running this analysis gave the following output.
 
output_NMOS_ID_VDS.JPG 
 
3.
A schematic for simulating ID v. VSD (note VSD not VDS) of a PMOS device for VSG (not VGS) varying from 0 to 5 V in 1 V steps while VSD varies from 0 to 5 V in 1 mV steps. Use a 12u/600n width-to-length ratio.

I created the schematic for thhis simulation using a PMOS with three voltage sources setting one of them to zero, the other equal to 5,  and one equal to VSG. This created the following schematic.

 schematic_PMOS_ID_VSG.JPG



This passed the check and save, now I can launch ADE-L. I made sure to go to SetUp->Model Libraries to include ami06p. I added the VSG variable and set it to 0. I then set the the analysis to dc, checked component parameter, set the component parameter to /V1 since thats the voltage we want to vary, I set the sweep to start stop from 0 to 5, the sweep type to Linear, and the step size to 1m.
 
launch_PMOS_ID_VSG.JPG
 
To run the  simulation with varying VSG I went to Tools->Parametric Analysis and set the parameters to the ones seen below.
 
parametric_analysis_PMOS_ID_VSG.JPG
 
Once I hit the run button this is the output I received.

output_PMOS_ID_VSG.JPG
 
4.
A schematic for simulating ID v. VSG of a PMOS device for VSD = 100 mV where VSG varies from 0 to 2 V in 1 mV steps. Again, use a 12u/600n width-to-length ratio. 

 

For this schematic I used an NMOS4, I set the voltage that was equal to VSG to zero. I set the middle voltage to VSD and the outside voltage to 5, giving the schematic below.

 
schematic_PMOS_ID_VSD.JPG
 
After launching the ADE-L I set the analysis to dc with component parameter. In component name I put /V0 since we want to be varying VSG. I set it to sweep VSG linearly from 0 to 2 in 1 mV steps. I added the variable VSD and set it to 100mV. This gave me the following ADE-L.
 
launch_PMOS_ID_VSD.JPG
 
Running this analysis gave the following output.
 
output_PMOS_ID_VSD.JPG
 
  
The next part of the lab was:
 
Lay out a 12u/0.6u PMOS device and connect all 4 MOSFET terminals to probe pads. 
 
 I used the examples given in the lab to do the PMOS.

Here is the probe pad schematic and layout. The layout was made using the overglass layer and a metal 3 pin.
 
probe_pad_schematic.JPG   prob_pad_layout.JPG
 
Next i needed to create a schematic for the PMOS with all 4 terminals connected to probe pads.
 

 
 PMOS_ProbePad_Schematic.JPG
 
Now the layout was needed. I created the layout using metal 1 to connect to the PMOS gates. The metal 1 connected to metal 1 that went to the probe pads, using m2_m1 to connect m1 to m2 and then using m2 to connect to the metal 3 on the probe pads. Here is the result with verification of passing DRC.
 
PMOS_ProbePad_layout.JPG noerrors_PMOS_ProbePad.JPG
 
Here is a close up of the PMOS connections.
 
 probe_pad_PMOS_closeup.JPG
 
Next I used the symbol that includes the probe pads and PMOS to create a schematic for getting the I-V curves.
 
PMOS_schematic_usingProbePad_symbol.JPG
 
 

Lay out a 6u/0.6u NMOS device and connect all 4 MOSFET terminals to probe pads . 
For this I used the same probe pad schematic and layout. I used the PMOS schematics I had already created and just replaced the PMOS with NMOS and renamed the pins to get the following. 
 
NMOS_schematic_probepads.JPG
 
To create the corresponding layout I used the previous layout I created for PMOS and removed the PMOS and put an NMOS. I added an ntap and also added metal 1 connections to connect to the metal 1s that take you to the probe pads. I created pins for the metal 1 connections i created. I also verified that it passed DRC.
 
Probe_pad_NMOS_layout.JPG
noerrors_NMOS_ProbePad.JPG
 
Here is  a close up of the connections to NMOS.
 
Probe_pad_NMOS_layout_closeup.JPG
 
Next I used the symbol that includes the probe pads and   NMOS to create a schematic for getting the I-V curves.
 
NMOS_schematic_usingProbePad_symbol.JPG
 
 I created a back up of my work and zipped it up into lab4.zip. I then emailed a copy to myself.
 
lab4zip.JPG
emailbackup.JPG
 
 

 

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