Lab 5 : Design, Layout, and Simulation of CMOS Inverter
EE 421L Digital IC Design
By: David Nakasone – Email: nakasd3@unlv.nevada.edu
Assigned: September 22, 2021
Due: October 6, 2021
Lab description >>>
The combonation of the NMOS and PMOS MOSFET allows for many applications.
This lab exposes the student to the basic design, layout and and simulation of the CMOS inverter.
Many further applications rely on this principle. Completing the tutorial will develop the skills needed to execute this lab.
There are two major tasks for this lab:
A) Complete and document “tutorial 3”
B) Design, layout, and simulate
Part A : tutorial 3 >>>
[ 1 ] make schematic for CMOS
[ 2 ] derive the symbol
[ 3 ] design-rule-check the layout
[ 4 ] extract the layout
[ 5 ] confirm LVS
[ 6 ] build the simulation schematic
[ 7 ] adjust global values
[ 8 ] adjust step sizes
[ 9 ] simulate schematic
[ 10 ] simulate layout(extracted)
Part B : design, layout, and simulate >>>
[ 1 ] draft the standard CMOS schematic
[ 2 ] create symbol of the standard CMOS schematic
[ 3 ] DRC the standard CMOS layout
[ 4 ] extract the standard CMOS
[ 5 ] LVS the standard CMOS
[ 6 ] draft the 4x standard CMOS schematic
[ 7 ] create symbol of the 4x standard CMOS schematic
[ 8 ] DRC the 4x standard CMOS layout
[ 9 ] extract the 4x standard CMOS
[ 10 ] LVS the 4x standard CMOS
[ 13 ] prepare the standard CMOS schematic for simulation, using a variable capacitor
[ 14 ] standard CMOS schematic, 100fF, 1pF, 10pF, 100pf
[ 15 ] standard CMOS extraction, 100fF, 1pF, 10pF, 100pf
[ 16 ] standard CMOS UltraSim, 100fF, 1pF, 10pF, 100pf
[ 17 ] prepare the 4x standard CMOS schematic for simulation, using a variable capacitor
[ 18 ] 4x standard CMOS schematic, 100fF, 1pF, 10pF, 100pf
[ 19 ] 4x standard CMOS extraction, 100fF, 1pF, 10pF, 100pf
[ 20 ] 4x standard CMOS UltraSim, 100fF, 1pF, 10pF, 100pf
[ 21 ] conclusions
lab files here