Lab 3 - EE 421L
Lab procedure:
1) Using the 10k resitor layout created in Tutorial 1, create the layout for the 10-Bit DAC. The resistor layout consists of
an N-well layer with n-tap contacts on either side of the N-well drawn with the res_id layer to identify that the layout
will be a resistor.
In the C5 process, the N-well has a sheet resistance of about 800 ohms. The minimum width of an n-well is 3.6 micron. For
our purposes, the n-well for a 10k resistor has a width of 4.5 micron. From these numbers, the length of the resistor was calculated to be
56 micron. However upon DRC the length was found to be not on grid so this was adjusted to 56.1 micron and had zero errors upon
DRC. The extracted view led to a resistance of around 10.21k.
Below is the full layout of the 10-bit DAC.
A close up view of input B9 and output Vout.
All resistors are "stacked in parallel,"
or in other words laid out with the same X position but varying Y
positions on the grid. From the design rules, each resistor has a
space of 13.5 micron in between the next resistor. All connections between resistors as well as the pins are drawn on the metal1 layer.
2) Check and save, ensure there are no DRC violations and extract the layout for LVS. All of these operations can be found under the "Verify" tab at the top
of the Layout window.
Verify Tab
DRC
Extracted View
LVS (Note: For LVS, we will be comparing the extracted layout versus the schematic.
LVS Confirmation: LVS is successful when the netlists match. A pop up window will indicate whether or not LVS was successful.
You can double check by opening the output window from the LVS window shown above by pressing "Output."
As always, remember to backup your lab materials to a zip file and email to yourself.
End of Report