LAB 8 - EE 421L Digital Integrated Circuit Design
Authored
by
Charlie Torres-Garcia torresga@unlv.nevada.edu
Ulises Diaz diazu@unlv.nevada.edu
Antanasia Jones jonesa20@unlv.nevada.edu
12/06/2016
Project: - Generate a test chip layout for submission to MOSIS for fabrication.
Each test circuit should have its own power and ground should be shared between the circuits.
"Power should not be shared between the circuits so that a vdd!-gnd! short in one circuit doesn't make one of the other circuits inoperable"
The chip will include the following test structures:
- A 31-stage ring oscillator with a buffer for driving a 20 pF off-chip load
- NAND and NOR gates using 6/0.6 NMOSs and PMOSs
- An inverter made with a 6/0.6 NMOS and a 12/0.6 PMOS
- Transistors, both PMOS and NMOS, measuring 6u/0.6u
- 25k resistor laid out below and a 10k resistor to implement a voltage divider
- A 25k resistor implemented using the n-well (connect between 2 pads but we also need a common gnd pad)
- A Detector circuit (sequence 101011)
The padframe follows the bonding diagram below. Pins < 1 > --> Pin < 40 > size: 1440um by 1440 um
FULL CHIP LAYOUT:
Schematic: Layout:
Pin LIST:
REMEMBER pin < 20 > IS GROUND FOR ALL TEST CIRCUITS & VDD = 5V !!!!!!!!
31-Stage Ring Oscillator:
Schematic:
![](lab8/T_os.png)
NMOS: PMOS:
NAND: NOR:
Schematics:
INVETER: XOR:
Schematics:
![](lab8/XOR.jpg)
![](lab8/T_xor.png)
Voltage Divider (25k & 10K resistors)
Schematic:
FULL-Adder:
Schematic:
Detector:
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