Lab 3 - ECE 421L

Layout of a 10-bit digital-to-analog converter (DAC) 

Prepared by:

Jason Sikorski

sikorsk4@unlv.nevada.edu

September 29, 2014

  

Lab description:

 

PRELAB WORK:

 

All files for EE421L were zipped, backed up and emailed.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%201.png

Fig 1

 

Tutorial 1 had been finished previously as a part of Homework #4 A2.6

 

LAB WORK:

 

A new library for Lab 3 was created, ensuring to attach the correct tech library for the C5N process.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%202.png

Fig 2

 

The layout from Tutorial 1 and HW #4 was copied to the Lab 3 library.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%203.png

Fig 3

 

The design of a resistor with a 10kΩ resistance in an n-well with a sheet resistance of 800Ω requires 10k/800 = 12.5 squares. Using the MOSIS scalable CMOS design rules, with a λ of .3µm, a min well width of 12λ and well spacing of 18λ , a 12λ*0.3µm = 3.6µm width is required and a 12.5*3.6µm = 45µm length is required.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%204.1.pngFig 4.1

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%204.2.pngFig 4.2

  

The dimensions for the n-well resistor from HW#4 were edited to the calculated requirements.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%205.png

Fig 5

 

A Design Rule Check (DRC) of this layout was performed and zero errors were found.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%206.pngFig 6

 

The layout was extracted and a resistance of 10.24kΩ was observed. This is a percent error of 2.4% which is acceptable for this application. This deviation in resistance will not have any effect on our voltage divider as the same layout is being used for each resistor. This will allow us to generate the expected 1 to 2 divider.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%207.pngFig 7

 

A new layout cellview was created for our R2R layout. In this layout we instantiated our resistor layout. From the MOSIS SCMOS we know that these n-well resistors must be have a minimum spacing of 18λ, for this design that equals 0.3µm * 18 = 5.4µm. The instantiated resistor was copied to a 3x1 array with Y spacing of 5.4 to ensure all spacing requirements were met.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%208.png

Fig 8

 

To connect the 3 resistors, a metal 1 layer was used. A width of 4λ  or 1.2µm was used, this is wider than the MOSIS SCMOS requirements of minimum width of 3λ.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%209.png

Fig 9

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%2010.png

Fig 10

 

In, Out and GndOut pins were placed on the layout to match the pins from our R2R schematic from lab 2.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%2011.pngFig 11

 

A DRC of the layout was performed and zero errors were found. The layout was then extracted.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%2012.png

Fig 12

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%2013.pngFig 13

 

A Layout Versus Schematic check was performed to compare this layout with the R2R schematic from lab 2 and zero errors were found.

 

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%2014.png

Fig 14

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%2015.png

Fig 15

http://cmosedu.com/jbaker/courses/ee421L/f14/students/sikorsk4/Lab3/Images/Fig%2016.pngFig 16


All files were zipped and emailed for backup

 

Download Sikorsk4_Lab3 files

 

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