Lab 9 - EE 420L 

Authored by Hongzhong Li,

Today's date:04/24/2015

Email: lih12@unlv.nevada.edu

Lab description

Pre-lab work

• This lab will use the level=1 MOSFET model created in lab 8 and, again, the MOSFETs in the CD4007.pdf CMOS transistor array.
• Design and simulate the operation of a BMR that biases the NMOS devices so that they have a g_m of 20 uA/V 
• Use a simple (big) resistor to VDD for the start-up circuit (explain how the addition of a resistor ensures start-up). 
• When the BMR is operating the current in the big resistor should be much smaller than the current flowing in each branch of the BMR 
  
• Write-up, similar to a homework assignment, your design calculations and simulation results. (This will count as the pre-lab quiz.)
• Ensure that you show the following in what you turn in:
• Hand calculations
• Operation as VDD is swept from 0 to 10 V 
• Vbiasn should stabilize (be constant) after VDD hits a minimum value (estimate this value of VDD assuming VGS/VSG is a threshold voltage and VDS,sat/VSD,sat is zero).
• Vbiasp should follow VDD after VDD hits a minimum value (show this in simulations)
• Unstable operation if too much capacitance is shunting the BMR's resistor (see bottom of page 630)
• Comments comparing the hand calculations with the simulation results

• Build your BMR design and characterize it as you did in the pre-lab
• You expect the BMR to become unstable if there is a large capacitance across the resistor, such as a scope probe (important), so care must be exercised 

	Operation as VDD is swept from 0 to 10 V

Without Capactior(unstable)	With Capacitor(stable)

• Use your BMR to bias, and thus create, a:
• NMOS current mirror 
• PMOS current mirror 

• Measure how the current varies through each current mirror as the voltage across the mirror changes.
• Of course the current in the NMOS (PMOS) current mirror goes to zero as the voltage on the drain of the output device moves towards ground (VDD)

 

PMOS current mirror

• Using these current mirrors drive two gate-drain connected transistors
• For the first experiment use the NMOS current mirror to drive two PMOS gate-drain connected devices. 
• Use the voltages on the gate-drain connection of the two devices to bias a cascode current mirror (characterize this mirror as before)
• For the second experiment switch, that is, use the PMOS current mirror to drive two NMOS gate-drain connected devices.
• Again, use these two voltages to bias an NMOS cascode current mirror then characterize.

 Experimental Result

 NMOS Cascode

PMOS Cascode

We realized that the experiemental data does not match exactly as our Hand Calculations/Simulatons. This is because we assume there is perfect matching and the circuit always operate in stable condition. However, in practical these circuits will affect by other factors as well therefore the result does not match exactly.

This concludes the Lab 9, all work has been back up and emailed.

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