************************************************** * Level 1 SPICE Models for the 4007 CMOS chip ************************************************** * These Level 1 models were extracted from measured results. The * model attempts to account for the package parasitics. The simulated and * typical measured device capacitances are as follows: * * NMOS: Cgs = 18pF Cds = 14pF * PMOS: Cgs = 17pF Cds = 26pF * * Gate-to-drain capacitances were not extracted but were adjusted to * to help fit measured results. *$ .MODEL CMOSP PMOS ( LEVEL = 1 L=5u W=100u +VTO = -1.40 KP = 3.2e-5 GAMMA = 3.30 +PHI = 0.65 LAMBDA = 9e-2 CBD = 65e-12 +CBS = 2e-14 IS = 1e-15 PB = 0.87 +CGSO = 0 CGDO = 0 CGBO = 1e-5 +CJ = 2e-10 MJ = 0.5 CJSW = 1e-9 +MJSW = 0.33 JS = 1e-8 TOX = 6.89e-10) *$ .MODEL CMOSN NMOS ( LEVEL = 1 L=5u W=20u +VTO = 1.77 Kp = 2.169e-4 GAMMA = 4.10 +PHI = 0.65 LAMBDA = 1.5e-2 CBD = 20e-12 +CBS = 0 IS = 1e-15 PB = 0.87 +CBS = 2e-14 CGDO = 88e-8 CGBO = 0 +CJ = 2e-10 MJ = 0.5 CJSW = 1e-9 +MJSW = 0.33 JS = 1e-8 TOX = 1.265e-10) ************************************************** * Macro for 4007 IC: ************************************************** * * Pinout: * * S4/psub G1,4 D5 S5 G5,2 S2 D2 * 1,2,3 - PMOS * _||___||___||___||___||___||___||_ * 4,5,6 - NMOS * | 7 6 5 4 3 2 1 | * All PMOS susbstrates * | | connected to pin 14 * | * | * All NMOS susbstrates * | | connected to pin 7 * | 8 9 10 11 12 13 14| * _ ___ ___ ___ ___ ___ ___ _ * || || || || || || || * D4 S6 G3,6 S3 D3,6 D1 S1/nsub * * General Form of subcircuit call: * X1 n1 n2 ... n14 CMOS4007 * *$ .SUBCKT CMOS4007 1 2 3 4 5 6 7 8 9 10 11 12 13 14 * MOSFET DR GT SRC SUBS MODEL L W M1 13 6 14 14 CMOSP L=5u W=100u M2 1 3 2 14 CMOSP L=5u W=100u M3 12 10 11 14 CMOSP L=5u W=100u M4 8 6 7 7 CMOSN L=5u W=20u M5 5 3 4 7 CMOSN L=5u W=20u M6 12 10 9 7 CMOSN L=5u W=20u .ENDS CMOS4007 * *$