LASI Schematic and Layout Examples using the MOSIS Design Rules
AMI Semiconductor (AMIS) in
In the AB process, a 1.5 um process with the scaling factor, lambda, of 0.8 um (using the SCMOS rules used in the MOSIS LASI setups, mosis.zip here). Minimum poly is 2*lambda or 1.6 um (and so minimum device Ldrawn is 1.6 um) The MOSIS site has SPICE and other information. For design rule checking using LasiDrc and the file Mosis_scmos.drc (the SCMOS rules). The MOSIS technology code is SCNA with lambda of 0.8.
In the C5 process, a 0.5 um process with the scaling factor, lambda, of 0.3 um. Minimum poly is 2*lambda or 0.6 um (and so minimum device Ldrawn is 0.6 um) The MOSIS site has SPICE and other information. For design rule checking using LasiDrc use the file Mosis_subm.drc. The MOSIS technology code is SCN3ME_SUBM with lambda of 0.3.
When using LasiCkt
- the footer file contains the SPICE models (right click on link to save), ami_abn_corner_bsim3.txt
or ami_c5n_corner_bsim3.txt
- the header file contains the type of analysis, any command scripts, options,
etc.
- all of the header files below use a .options scale factor of 0.3 um (for the
C5 process)
- the below examples are for use with WinSPICE or HSPICE (hspice_info.txt).
Right click on the links to save target
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CMOS Circuit Design, Layout, and Simulation
CMOS Mixed-Signal Circuit Design