LASI Schematic and Layout Examples using the MOSIS Design Rules

AMI Semiconductor (AMIS) in Pocatello, Idaho provides educational support for MOSIS and europractice multiproject wafers. The MOSIS educational program (MEP) participants can select between AMIS's AB and C5 CMOS processes. See here for more information.

In the AB process, a 1.5 um process with the scaling factor, lambda, of 0.8 um (using the SCMOS rules used in the MOSIS LASI setups, mosis.zip here). Minimum poly is 2*lambda or 1.6 um (and so minimum device Ldrawn is 1.6 um) The MOSIS site has SPICE and other information. For design rule checking using LasiDrc and the file Mosis_scmos.drc (the SCMOS rules). The MOSIS technology code is SCNA with lambda of 0.8.

In the C5 process, a 0.5 um process with the scaling factor, lambda, of 0.3 um. Minimum poly is 2*lambda or 0.6 um (and so minimum device Ldrawn is 0.6 um) The MOSIS site has SPICE and other information. For design rule checking using LasiDrc use the file Mosis_subm.drc. The MOSIS technology code is SCN3ME_SUBM with lambda of 0.3.

When using LasiCkt 
- the footer file contains the SPICE models (right click on link to save), ami_abn_corner_bsim3.txt or ami_c5n_corner_bsim3.txt
- the header file contains the type of analysis, any command scripts, options, etc.
- all of the header files below use a .options scale factor of 0.3 um (for the C5 process)
- the below examples are for use with WinSPICE or HSPICE (hspice_info.txt).

Right click on the links to save target

 

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