Revised 2nd Edition, ISBN-13: 978-0-470-22941-5, © 2008.

 

In the Revised 2nd Edition the software specific discussions, about 50 pages in chapters 1, 2, 3, and 5, were replaced with new material covering simulation and layout.

The Revised 2nd Edition is about 1 inch thinner than the earlier printings because a lower bulking paper is used.

 

Typos in the 4th and later printings of the Revised 2nd Edition (these won’t be fixed)

            page 348 – the term in Eq. (11.28), (r*l)(Cload) should be 2*(r*l)(Cload)

            page 500 – the right side of Eq. (17.21) should not have the Ccup in it since M4 is a source follower and isolates the two capacitors. Eq. (17.22) should be modified accordingly.

 

Typos fixed in the 3rd printing of the Revised 2nd Edition

page 411 – second paragraph, second sentence change “The dark dots indicate and, thus, a failing chip.” to “The dark dots indicate defects and thus bad chips.”

page 486 – Figure 17.3 the word “add” should be “remove”

page 500 – Eqs. (17.17) and (17.18) were derived where M represents the number of times the feedback path is enabled (as stated). There is an inconsistency, an inversion, between the two sentences following Eq. (17.18) and the schematic seen Fig. 17.18. Since the feedback path controls a PMOS device this path is enabled when the DSM output, Q, goes low (so M would represent the number of times Q goes low). To eliminate the inconsistency we could add an inverter to the output of the DSM in Fig. 17.18 so that M represents the number of times the DSM output goes high and thus the number of times M3 is enabled.

page 917 – eighth line down change 2.49-2.51 V to 2.45-2.55 V

page 928 – fifth line, second paragraph, the x-input is 0.25 not 0.5 as indicated (the calculation for the location of point A is correct). In the same paragraph, seventh line, point B is at -1.8V not 1.8 V

page 950 – Fig. 28.21b the decimal point is missing in front of the ½ LSB DNL, that is, 5 should be .5

index - Saturation region is listed twice, separated by Salicide

 

Typos fixed in the 2nd printing of the Revised 2nd Edition

page 18 – bottom of the page replace: - 0.294 with - 0.119, - 16.85 with - 6.82, and the time delay in Eq. (1.9), - 234 us with - 95 us

page 42 – second paragraph, second line “determining” is misspelled

page 53 – the triple-well figure should be 2.24d (not 2.24c), change in first paragraph “can be used, Fig. 2.24c.” to “can be used, Fig. 2.24d.”

page 54 – replace “Being able use the” with “Being able to use the”

page 61 – second line change “capacitance for metal1” to “capacitance for metal2”

page 77 – Fig. 3.23 should only have 6 pads on a side not 7 (so the total number of pads is 24 not 28)

page 686 – 14th line down change “and to eliminate the” to “and to eliminate, or more correctly to reduce, the”

page 687 – in Eq. (21.78) Av1 should be - gm1*ro/2. This means, in Ex. 21.12, that Av1 = - 3.75, tau_in = 1.16 ns, and thus fin = 137 MHz.

 

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Typos fixed during the 2nd, 3rd, and 4th printings of the 2nd Edition (old edition), ISBN-13: 978-0-471-70055-5, published October 2004.

page 25 - swap vin and vout in Fig. 1.25 (vout < vin)

page 66 - the pulse delay in the SPICE netlist should be 50p not 5n

page 85 - Figure 4.2(f) subtitle should indicate (e) not (g)

page 86 - last line in second paragraph change "select" to "active"

page 88 - figure 4.4, there shouldn't be an oxide above the silicided MOSFET S/D

page 91 - there shouldn't be an oxide above the silicided MOSFET S/D in (h)

page 97 - in the ninth line from the bottom change "are" to "area"

page 99 - the rules show the minimum poly gate extension is 1 where it should be 1.25.

page 108 - Ex. 5.2 should be a 10k resistor not 50k

page 136 - two lines above Eq. (6.8) should be changed from "inversion and depletion cases." to "inversion and accumulation cases."

page 139 - Equation (6.17) the term Vfb should be Vfp

page 150 - a parentheses around nkT in Eq. 6.48

page 153 - indicate, in the last paragraph, that hot indicates carriers with higher than thermal equilibrium energy

page 174 - change the spinning direction of the wafer (not wrong just more common)

page 214 - capitalize Joules in four line

page 216 - modify figure 8.4 to show the power meter measures V^2,RMS and that the PSD is this power divided by the resolution of the spectrum analyzer

page 228 - second line, the word SPICE should be moved to above the figure

page 246 - ninth line down change 8.50 to 8.51

page 272 - third line down change series to parallel

page 273 - swap the + and - in Fig. 9.6b

page 275 - add 1 uA next to the current source in Fig. 9.9

page 284 - add t (time) to the bottom two equations (the sinusoids) on the page

page 285 - add a - in front of 0.5 mV third line down

page 289 - fix partially hidden VDS on the x-axis in Fig. 9.24

page 295 - indicate that the temperatures are in Kelvin for Eq. (9.52)

page 297 - indicate velocity overshoot and other effects cause the gm to increase with vgs

page 309 - problem 9.26 change the 9.1 to 9.2

page 311 - sixth line from the bottom change "is a 0 V" to "is at 0 V"

page 312 - change the direction of the pulse in Fig. 10.3b

page 327 - last line change "fetoprobes" to "femtoprobes"

page 341 - eighth line down change 11.13 to 11.15, above this change "Latch-Ip" to "Latch-Up"

page 348 - remove the 2 at the beginning of Eq. 11.28, and change comments describing RC line delay and the delay associated with the resistance driving the load C

page 376 - first line change Evaluating to Increasing

page 380 – Figure is spelled wrong in Figure 13.9

page 395 - first line change 13.5ps to 15.75 ps

page 446 - remove the word trench from the third line

page 447 - 9th line down change 8-Mbit to 16-Mbit

page 450 - 16th line down change "VDD is large" to "VDD is small", change the figure caption to 16.26 instead of 16.27

page 451 - 11th line from the bottom of the page change "power" to "current"

page 460 - last line change "(ideally) ,to" to "(ideally), to"

page 466 - fix the space after the word higher in Fig. 16.53

page 468 - change the direction of electron flow in Fig. 16.56

page 471 - capitalize NAND in the figure caption of Fig. 16.61

page 488 - fourth line from the bottom change "constant ,we" to "constant, we"

page 495 - fourth line from the bottom should be 17.11b not 17.11a

page 500 - first line change 17.15 to 17.16

page 513 - Eq. 17.42 the (N - M)/M should be M/(N - M) also change N/2<=M<=N to 0<=M<=N/2

page 517 – second paragraph from bottom change “The thermal noise from the capacitors is” to “The input-referred thermal noise is set by the sampling capacitors and is…”

page 518 - Fig. 17.38 flip the polarity of the offset and first line of second paragraph change 17.33 to 17.36

page 545 - second to the last line should be (N+1)*VDD - N*VTHN and N*VDD - N*VTHN

page 546 - fourth line from the bottom in first paragraph change "A larger capacitor is used on node A" to "A larger capacitor is used on node B"

page 553 - fourth line down capabilities is spelled wrong

page 554 - seventh line down add an s to continue

page 564 - fifth line up change 1 mV to 10 mV

page 604 - first line change 10k to 5k

page 618 - problem 19.14 change "that it" to "that it is"

page 615 - fig. 20.4 change the 210k resistor to 200k

page 620 - tenth line down change 0.2 to 0.1

page 625 – write Eq. (20.23) in terms of the overdrive voltage as well (IREF=  and Vov=)

page 637 - second line from the bottom change "drain" to "drain voltage" also change the MOSFET references to they refer to the correct MOSFETs

page 639 - Fig. 20.31b change the VGS on the gate of M4 to simply VG

page 649 - Fig. 20.45b fix typo of MB7 to MB6 (second row of PMOS)

page 651 - fourth line down change Vbias2 to Vbias4

page 657 - eighth line from bottom fix space in "common- source". In the last line change from 21.1 to 21.1a

page 667 - remove square-root brackets in Eq. (21.21)

page 674 - first line of second paragraph add extra parentheses so they are balanced

page 686 – Eq. (21.75) should be “V^2inoise =…” instead of “V^2onoise =…”

page 687 - take the magnitude of the second to the bottom equation

page 688-690 - equations (21.84) and (21.85) are only valid when the drain of M2 is connected to a low impedance. Also, remove noise from M2/M3 in Eqs. (21.79) and (21.80) See here for updated pages.

page 692 - second line from the bottom change 600 mV to 500 mV, last paragraph change all 250 mV to 280 mV

page 694 – remove M2’s noise contributions in Eq. (21.99), show why in Fig. 21.44

page 697 – replace the W in Eq. (21.108) with K and indicate K=12.5 (the gm scales linearly with the MOSFET’s width) and change 530 uA/V to 1.875 mA/v. Change, in the next equation, 1.88k to 533 and 0.84 to 0.95, two lines below that change 500*0.84 = 420 ==> 52.5 dB to 500*0.95 = 425 ==> 53 dB

pages 697-703 - The symbols RL and Rload are used interchangeably. Should, to be consistent, just use Rload.

page 702 – first equation, move the 1k out of the brackets for a Pload of 125uW, the Psupply becomes 325uW, the PCE becomes 38%, without bias circuit current PCE is 68%

Page 715 – 11th line from the bottom change “folded- cascode” to “folded-cascode”

page 717 - fix the formatting of the Iss in Eq. 22.15

page 718 - Ex. 22.4 add an s to components, remove the s on drains, add the word current after drain, and change 150 uA/V^2 to simply 150 uA/V

page 719 - change, in Fig. 22.10's caption, 22.10 to 22.4, two lines above Eq. (22.20) change “the AC current flowing in ro4 is id1.” to “the AC current flowing in M4 is id1.” (change ro4 to M4)

page 726 - eq. (22.32) the output noise is divided by A^2d (not the input noise), change the label on the noise source for M3 in Fig. 22.20 from 6 to 3

page 735 - should be 3.6 V not 3.65 V and 4.4 V not 4.45 V in Ex. 22.9

page 746 - fourth line down should indicate Ch. 5 not Ch. 7

page 749 - remove VSS from Eq. (23.8)

page 762 - Ex. 23.4 should say using Eq. (23.23) not (23.22)

page 765 – add a start-up circuit to Fig. 23.27

page 766 - change the simulation and discussion to include the start-up circuit added on the previous page

page 769 - change figs. 23.31 and 32 as seen at: http://cmosedu.com/cmos1/book.htm

page 774 – fifth and seventh lines from the bottom change 900 mV to 930 mV

page 785 - indicate equation (24.19) is an approximation for |K*Cc/gm1| >> Cc/gmcg

page 790 - Eq. 24.27 should have Acm not Ac

page 791 - fourth and first lines from the bottom change 20.21, 21.21 to 23.21

page 792 - Eq. (24.31) should indicate open loop gain AOL not just A

page 793 - last line remove the square-root bracket can change the gain to -31.6

page 794 - first line change gain from 5,000 to 15,600 and gain from 74 dB to 84 dB, also remove square-root in fourth line down

page 795 - first line remove the word "and"

page 800 - last line in second paragraph change fig. 24.38 to fig. 24.39

page 802 - fig. 24.40 shift vm down a little

page 817 - after equation (24.76) should say CLmin not CLmax

page 820 - fourth line in second paragraph fix space in "common- source"

page 822 - fourth line from the bottom should be 2400 fF not 2400 pF

page 851 - fix caption for Fig. 25.29a

page 873 - change caption for Fig. 26.14

page 880 - second line from the bottom fix space in "common- mode"

page 897/898 - change 10f to 50f and the 25f to 10f in Fig. 26.50 (not wrong just a little more robust)

page 908 - change the word edition to volume in problem 26.19

page 919 - fix space in "cross- coupled" sixth line from top, fix fig. 27.16 caption

page 950 - third line from the bottom change 011 to 100

page 1018 - problem 29.6 change "Fig. P29.6" to "Fig. 29.52"

page 1019 - problem 29.7 change "5 mA" to "5 uA"

augmented index in second and later printings

 

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